SiC power MOSFETs have been investigated by performing two different kinds of measurements, the hysteresis between two adjecent sweeps and the positive bias temperature instability, at different temperatures. The threshold hysteresis is a measure of the switching dynamics of the interface traps, while measurements at long stress times can reveal the role of an additional interface degradation. In order to fully understand the role played by the latter mechanisms, TCAD simulations have been calibrated in order to reproduce the experimental results.
Characterization and Modeling of BTI in SiC MOSFETs / Cornigli D.; Tallarico A.N.; Reggiani S.; Fiegna C.; Sangiorgi E.; Sanchez L.; Valdivieso C.; Consentino G.; Crupi F.. - ELETTRONICO. - 2019-:(2019), pp. 8901761.82-8901761.85. (Intervento presentato al convegno 49th European Solid-State Device Research Conference, ESSDERC 2019 tenutosi a Cracow, POLAND nel SEP 23-26, 2019) [10.1109/ESSDERC.2019.8901761].
Characterization and Modeling of BTI in SiC MOSFETs
Cornigli D.;Tallarico A. N.;Reggiani S.;Fiegna C.;Sangiorgi E.;
2019
Abstract
SiC power MOSFETs have been investigated by performing two different kinds of measurements, the hysteresis between two adjecent sweeps and the positive bias temperature instability, at different temperatures. The threshold hysteresis is a measure of the switching dynamics of the interface traps, while measurements at long stress times can reveal the role of an additional interface degradation. In order to fully understand the role played by the latter mechanisms, TCAD simulations have been calibrated in order to reproduce the experimental results.| File | Dimensione | Formato | |
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