GaN HEMT dispersive phenomena due to charge trapping can be effectively characterized by means of pulsed IV measurements. In this work, we exploit the wideband feature of the setup obtaining pulsed S-parameters measurements within narrow pulse widths, in the order of a few hundred ns. Then, we report the single and double-pulsed S-parameters characterization of the 100-nm GaN-on-Si HEMT technology by OMMIC, showing the impact of traps on the small-signal parameters and providing significant data for compact model identification.
Narrow-pulse-width double-pulsed S-parameters measurements of 100-nm GaN-on-Si HEMTs / Angelotti A.M.; Gibiino G.P.; Florian C.; Santarelli A.. - ELETTRONICO. - (2019), pp. 8909600.17-8909600.20. (Intervento presentato al convegno 14th European Microwave Integrated Circuits Conference, EuMIC 2019 tenutosi a Paris, France nel 2019) [10.23919/EuMIC.2019.8909600].
Narrow-pulse-width double-pulsed S-parameters measurements of 100-nm GaN-on-Si HEMTs
Angelotti A. M.;Gibiino G. P.;Florian C.;Santarelli A.
2019
Abstract
GaN HEMT dispersive phenomena due to charge trapping can be effectively characterized by means of pulsed IV measurements. In this work, we exploit the wideband feature of the setup obtaining pulsed S-parameters measurements within narrow pulse widths, in the order of a few hundred ns. Then, we report the single and double-pulsed S-parameters characterization of the 100-nm GaN-on-Si HEMT technology by OMMIC, showing the impact of traps on the small-signal parameters and providing significant data for compact model identification.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
