A fully automatic procedure for the empirical extraction of field-effect transistors (FETs) parasitic network is proposed. By exploiting a grid search approach combined with linear regression, the identification requires Y-parameter measurements at a very few (even just one) bias points. The method is verified in simulation and applied to measurements of a 250-nm GaN high-electron-mobility transistor (HEMT).
Measurement-Based Automatic Extraction of FET Parasitic Network by Linear Regression / Gibiino G.P.; Santarelli A.; Cignani R.; Traverso P.A.; Filicori F.. - In: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS. - ISSN 1531-1309. - STAMPA. - 29:9(2019), pp. 8804362.598-8804362.600. [10.1109/LMWC.2019.2933095]
Measurement-Based Automatic Extraction of FET Parasitic Network by Linear Regression
Gibiino G. P.;Santarelli A.;Cignani R.;Traverso P. A.;Filicori F.
2019
Abstract
A fully automatic procedure for the empirical extraction of field-effect transistors (FETs) parasitic network is proposed. By exploiting a grid search approach combined with linear regression, the identification requires Y-parameter measurements at a very few (even just one) bias points. The method is verified in simulation and applied to measurements of a 250-nm GaN high-electron-mobility transistor (HEMT).I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
