An original empirical approach to deal with nonlinear dynamic thermal effects in electron devices is proposed. The new technology-independent approach is very compact and easy to implement in computer-aided design tools. Therefore, it can be easily coupled with electrical device models in order to obtain accurate electrothermal models that are suitable for nonconstant-envelope RF applications (e.g., pulsed radar). Model equations and identification procedures are derived in this paper. Validation results and comparison with simplified models are also presented both for a simulated field-effect transistor device, as well as for a real heterojunction bipolar transistor device.

Compact empirical modeling of nonlinear dynamic thermal effects in electron devices

MELCZARSKY, ILAN;FILICORI, FABIO;SANTARELLI, ALBERTO
2008

Abstract

An original empirical approach to deal with nonlinear dynamic thermal effects in electron devices is proposed. The new technology-independent approach is very compact and easy to implement in computer-aided design tools. Therefore, it can be easily coupled with electrical device models in order to obtain accurate electrothermal models that are suitable for nonconstant-envelope RF applications (e.g., pulsed radar). Model equations and identification procedures are derived in this paper. Validation results and comparison with simplified models are also presented both for a simulated field-effect transistor device, as well as for a real heterojunction bipolar transistor device.
2008
I. Melczarsky; J. A. Lonac; F. Filicori; A. Santarelli
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/69500
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