The paper addresses the calculation of the band structure for different phases of the chalcogenide Ge2Sb2Te5 compound, which is raising considerable interest in view of the applications to the nonvolatile-memory technology. The band structure is necessary for determining the charge- and heat-transport properties of the material. The band diagram of the face-centered cubic phase, which is the most important one for the operation of phase-change memories, is shown for the first time.
Band Calculation for the Hexagonal and FCC Chalcogenide Ge2Sb2Te5 / E. Piccinini; F. Buscemi; T. Tsafack; R. Brunetti; M. Rudan; C. Jacoboni. - STAMPA. - (2008), pp. 229-232. (Intervento presentato al convegno 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008) tenutosi a Hakone, Japan nel September, 9-11 2008).
Band Calculation for the Hexagonal and FCC Chalcogenide Ge2Sb2Te5
PICCININI, ENRICO;BUSCEMI, FABRIZIO;TSAFACK TSOPBENG, THIERRY BIENVENU;RUDAN, MASSIMO;
2008
Abstract
The paper addresses the calculation of the band structure for different phases of the chalcogenide Ge2Sb2Te5 compound, which is raising considerable interest in view of the applications to the nonvolatile-memory technology. The band structure is necessary for determining the charge- and heat-transport properties of the material. The band diagram of the face-centered cubic phase, which is the most important one for the operation of phase-change memories, is shown for the first time.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
