This Letter presents the impact of silicon substrate resistivity on SiGe phototransistors. SiGe phototransistors were fabricated on the commercially available SiGe/Si bipolar technology. The performances of the phototransistors fabricated based on low- and the high-resistive silicon substrate are compared. The phototransistor based on low-resistivity (LR) silicon substrate provides a responsivity of more than double compared to the phototransistor based on a high-resistivity silicon substrate that is fabricated by using the same bipolar transistor technology. The phototransistor fabricated on LR substrate exhibits low-frequency responsivity up to 1.35 A/W (at 50 MHz).
Substrate resistivity influence on silicon–germanium phototransistor performance / Tegegne Z.G.; Nanni J.; Viana C.; Tartarini G.; Polleux J.-L.. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - ELETTRONICO. - 55:11(2019), pp. 656-658. [10.1049/el.2019.0203]
Substrate resistivity influence on silicon–germanium phototransistor performance
Nanni J.;Tartarini G.;
2019
Abstract
This Letter presents the impact of silicon substrate resistivity on SiGe phototransistors. SiGe phototransistors were fabricated on the commercially available SiGe/Si bipolar technology. The performances of the phototransistors fabricated based on low- and the high-resistive silicon substrate are compared. The phototransistor based on low-resistivity (LR) silicon substrate provides a responsivity of more than double compared to the phototransistor based on a high-resistivity silicon substrate that is fabricated by using the same bipolar transistor technology. The phototransistor fabricated on LR substrate exhibits low-frequency responsivity up to 1.35 A/W (at 50 MHz).I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.