A charge function identification procedure for GaN-HEMTs is proposed. This is based on a frequency-domain integration of displacement current waveforms obtained from an auxiliary model extracted from multi-bias S-parameters. The method is compared with a similar technique recently proposed, which is instead based on direct acquisitions of large-signal waveforms at the transistor ports by means of a nonlinear vector network analyzer (NVNA). Comparisons between the two approaches are provided by using a 1-mm GaN-on-SiC HEMT, leading to conclude that thermal and trap-induced dispersion on charges have an impact quantified in ∼ 4% - 18% normalized mean square error on the displacement current prediction, depending on the waveforms considered.

A Procedure for GaN HEMT Charge Functions Extraction from Multi-Bias S-Parameters

Gian Piero, Gibiino;Santarelli, Alberto;Filicori, Fabio
2018

Abstract

A charge function identification procedure for GaN-HEMTs is proposed. This is based on a frequency-domain integration of displacement current waveforms obtained from an auxiliary model extracted from multi-bias S-parameters. The method is compared with a similar technique recently proposed, which is instead based on direct acquisitions of large-signal waveforms at the transistor ports by means of a nonlinear vector network analyzer (NVNA). Comparisons between the two approaches are provided by using a 1-mm GaN-on-SiC HEMT, leading to conclude that thermal and trap-induced dispersion on charges have an impact quantified in ∼ 4% - 18% normalized mean square error on the displacement current prediction, depending on the waveforms considered.
2018
EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference
65
68
Gian Piero, Gibiino; Santarelli, Alberto; Filicori, Fabio
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/674560
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