In this paper, we review recent developments of the Monte Carlo approach to the simulation of semi-classical carrier transport in nano-MOSFETs, with particular focus on the inclusion of quantum-mechanical effects in the simulation (using either the multi-subband approach or quantum corrections to the electrostatic potential) and on the numerical stability issues related to the coupling of the transport with the Poisson equation. Selected applications are presented, including the analysis of quasi-ballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non-conventional device structures and channel materials.

The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs

SANGIORGI, ENRICO;FIEGNA, CLAUDIO;
2008

Abstract

In this paper, we review recent developments of the Monte Carlo approach to the simulation of semi-classical carrier transport in nano-MOSFETs, with particular focus on the inclusion of quantum-mechanical effects in the simulation (using either the multi-subband approach or quantum corrections to the electrostatic potential) and on the numerical stability issues related to the coupling of the transport with the Poisson equation. Selected applications are presented, including the analysis of quasi-ballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non-conventional device structures and channel materials.
2008
E. Sangiorgi; P. Palestri; D. Esseni; C. Fiegna; L. Selmi
File in questo prodotto:
Eventuali allegati, non sono esposti

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/64532
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 18
  • ???jsp.display-item.citation.isi??? 15
social impact