A simulation study on the impact of interface traps (ITs) and strain on the I/V characteristics of co-optimized n- and p-type tunnel field-effect transistors (TFETs) realized on the same InAs/Al0.05Ga0.95Sb technology platform is carried out using a full-quantum simulator. In order to capture the effect of interface/border traps on the device electrostatics in a way consistent with the ballistic approach, the classical Shockley-Read-Hall theory has been properly generalized. Traps induce a significant reduction on the ON-current; however, the inclusion of a uniform strain induces a remarkable current enhancement able to completely recover the current degradation.
Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs / Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio. - ELETTRONICO. - (2017), pp. 7962580.13-7962580.16. (Intervento presentato al convegno 2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 tenutosi a grc nel 2017) [10.1109/ULIS.2017.7962580].
Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs
Visciarelli, M.;Gnani, E.
;Gnudi, A.;Reggiani, S.;Baccarani, G.
2017
Abstract
A simulation study on the impact of interface traps (ITs) and strain on the I/V characteristics of co-optimized n- and p-type tunnel field-effect transistors (TFETs) realized on the same InAs/Al0.05Ga0.95Sb technology platform is carried out using a full-quantum simulator. In order to capture the effect of interface/border traps on the device electrostatics in a way consistent with the ballistic approach, the classical Shockley-Read-Hall theory has been properly generalized. Traps induce a significant reduction on the ON-current; however, the inclusion of a uniform strain induces a remarkable current enhancement able to completely recover the current degradation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.