The impact of strain and semiconductor/oxide interface traps (ITs) on the turn-on characteristics of a 10x10 nm^2 nanowire (NW) Al0.05Ga0.95Sb/InAs heterojunction n-type tunnel field-effect transistor (TFETs) is carefully investigated using a full-quantum simulator. In order to capture the effect of traps on the device electrostatics in a way consistent with the ballistic approach, the SRH theory has been properly generalized. Our results indicate that the presence of a relatively high IT density can cause a huge current reduction that cannot be recovered exploiting strain. In fact, biaxial tensile strain induces a remarkable current enhancement due to bandgap reduction and tunnel energy alignment at the heterojunction; however, a huge degradation of the ambipolar behavior is also observed.
Impact of strain and interface traps on the performance of III-V nanowire TFETs / Gnani, Elena; Visciarelli, Michele; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio. - ELETTRONICO. - (2016), pp. 7998897.275-7998897.278. (Intervento presentato al convegno 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 tenutosi a chn nel 2016) [10.1109/ICSICT.2016.7998897].
Impact of strain and interface traps on the performance of III-V nanowire TFETs
Gnani, E.
;Visciarelli, M.;Gnudi, A.;Reggiani, S.;Baccarani, G.
2016
Abstract
The impact of strain and semiconductor/oxide interface traps (ITs) on the turn-on characteristics of a 10x10 nm^2 nanowire (NW) Al0.05Ga0.95Sb/InAs heterojunction n-type tunnel field-effect transistor (TFETs) is carefully investigated using a full-quantum simulator. In order to capture the effect of traps on the device electrostatics in a way consistent with the ballistic approach, the SRH theory has been properly generalized. Our results indicate that the presence of a relatively high IT density can cause a huge current reduction that cannot be recovered exploiting strain. In fact, biaxial tensile strain induces a remarkable current enhancement due to bandgap reduction and tunnel energy alignment at the heterojunction; however, a huge degradation of the ambipolar behavior is also observed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
