The interaction between strain and border traps in short-channel InGaAs NW MOSFETs is investigated through full-quantum 3D simulations based on a k·p Hamiltonian. Traps induce a sizable degradation of the ON-current, which can be recovered through the application of a suitable strain, provided the quantization effects, which increase by scaling the NW lateral size, do not become too large.

A full-quantum simulation study of InGaAs NW MOSFETs including interface traps

VISCIARELLI, MICHELE;GNUDI, ANTONIO;GNANI, ELENA;REGGIANI, SUSANNA
2016

Abstract

The interaction between strain and border traps in short-channel InGaAs NW MOSFETs is investigated through full-quantum 3D simulations based on a k·p Hamiltonian. Traps induce a sizable degradation of the ON-current, which can be recovered through the application of a suitable strain, provided the quantization effects, which increase by scaling the NW lateral size, do not become too large.
2016
European Solid-State Device Research Conference
180
183
Visciarelli, Michele; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna
File in questo prodotto:
Eventuali allegati, non sono esposti

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/588905
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 7
  • ???jsp.display-item.citation.isi??? 6
social impact