A general expression is worked out for the trap-to-trap transition probability per unit time, applicable to amorphous materials where charge conduction is dominated by localized states. The outcome is a closed-form expression involving temperature and local electric potential. It is suitable for inclusion into hydrodynamic or energy-balance numerical solvers to be used for simulating devices based on amorphous materials.
Closed-form transition rate in hopping conduction / Piccinini, E.; Rudan, M.; Brunetti, R.. - STAMPA. - (2016), pp. 315-318. (Intervento presentato al convegno 2016 46th European Solid-State Device Research Conference (ESSDERC) tenutosi a Lausanne, Switzerland nel September 12-15, 2016) [10.1109/ESSDERC.2016.7599649].
Closed-form transition rate in hopping conduction
PICCININI, ENRICO;RUDAN, MASSIMO;
2016
Abstract
A general expression is worked out for the trap-to-trap transition probability per unit time, applicable to amorphous materials where charge conduction is dominated by localized states. The outcome is a closed-form expression involving temperature and local electric potential. It is suitable for inclusion into hydrodynamic or energy-balance numerical solvers to be used for simulating devices based on amorphous materials.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
