In this paper, we present the results of a combined measurement/simulation analysis of the degradation induced by on-state stress in Au-free AlGaN/gallium-nitride-on-Si Schottky barrier diodes (SBDs). Turn-on voltage (VTON) and on-resistance (RON) are affected by charge carrier trapping/detrapping, occurring in different regions and caused by different mechanisms, when a high stress current is applied to the device. In particular, we have investigated the degradation of SBDs adopting different stress conditions and analyzing the influence of the diode geometry; consequently, we were able to identify the physical mechanisms responsible for long-Term degradation of VTON and RON. In addition, thanks to this approach, a critical electric field for the RON degradation has been determined.
ON-State Degradation in AlGaN/GaN-on-Silicon Schottky Barrier Diodes: Investigation of the Geometry Dependence / Tallarico, Andrea Natale; Magnone, Paolo; Stoffels, Steve; Lenci, Silvia; Hu, Jie; Marcon, Denis; Sangiorgi, Enrico; Decoutere, Stefaan; Fiegna, Claudio. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - ELETTRONICO. - 63:9(2016), pp. 7536602.3479-7536602.3486. [10.1109/TED.2016.2593945]
ON-State Degradation in AlGaN/GaN-on-Silicon Schottky Barrier Diodes: Investigation of the Geometry Dependence
TALLARICO, ANDREA NATALE;SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2016
Abstract
In this paper, we present the results of a combined measurement/simulation analysis of the degradation induced by on-state stress in Au-free AlGaN/gallium-nitride-on-Si Schottky barrier diodes (SBDs). Turn-on voltage (VTON) and on-resistance (RON) are affected by charge carrier trapping/detrapping, occurring in different regions and caused by different mechanisms, when a high stress current is applied to the device. In particular, we have investigated the degradation of SBDs adopting different stress conditions and analyzing the influence of the diode geometry; consequently, we were able to identify the physical mechanisms responsible for long-Term degradation of VTON and RON. In addition, thanks to this approach, a critical electric field for the RON degradation has been determined.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
