A TCAD-based approach has been used to investigate the leakage current and breakdown regime of vertical GaN/AlGaN/Si structures at different ambient temperatures. A good agreement with experimental data has been obtained by implementing both trap-assisted and Poole-Frenkel conduction mechanisms into the buffer layers. The latter mechanisms have been proven to anticipate the onset of breakdown at high temperatures.
Leakage current and breakdown of GaN-on-Silicon vertical structures / Cornigli, D.; Monti, F.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.. - STAMPA. - (2015), pp. 7063764.25-7063764.28. (Intervento presentato al convegno 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 tenutosi a ita nel 2015) [10.1109/ULIS.2015.7063764].
Leakage current and breakdown of GaN-on-Silicon vertical structures
CORNIGLI, DAVIDE;REGGIANI, SUSANNA;GNANI, ELENA;GNUDI, ANTONIO;BACCARANI, GIORGIO
2015
Abstract
A TCAD-based approach has been used to investigate the leakage current and breakdown regime of vertical GaN/AlGaN/Si structures at different ambient temperatures. A good agreement with experimental data has been obtained by implementing both trap-assisted and Poole-Frenkel conduction mechanisms into the buffer layers. The latter mechanisms have been proven to anticipate the onset of breakdown at high temperatures.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
