A TCAD Low-Field Electron Mobility Model for Thin-Body InGaAs on InP MOSFETs Calibrated on Experimental Characteristics

A simple analytical low-field electron mobility model to be employed for technology computer-aided design of thin-body MOSFETs based on III-V compound semiconductors is presented. The scattering sources accounted for in the model are Coulomb centers, lattice vibrations (i.e., phonons), and surface roughness. The dependence of the thin-body effective thickness on the transverse electric field is calculated through 1-D Schrödinger-Poisson numerical simulations and is introduced in the model by means of an appropriate analytical function. Then, the free-electron density distribution is determined by considering both quantization effects and oxide-semiconductor interface traps. The model is calibrated on the experimental data collected on In0.53Ga0.47AS-on-InP thin-body MOSFETs featuring body thicknesses as low as 5 nm. In particular, the model accurately reproduces CG-VGS characteristics, effective mobility against inversion layer charge plots, and IDS-VGS curves at low VDS.