We compare through numerical simulations a Si GBHT and a SiGe HBT: the fT limit of GBHTs is predicted to be more than twice as high as for HBTs assuming a transparent graphene/Si interface; if a more realistic interface model extrapolated from existing experiments is used, the fT limit drops by about two orders of magnitude.
Graphene-base heterojunction transistors for post-CMOS high-speed applications: Hopes and challenges / Di Lecce, Valerio; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio. - STAMPA. - (2015), pp. 91-92. (Intervento presentato al convegno 2015 73rd Annual Device Research Conference (DRC) tenutosi a Columbus, OH nel 21-24 June 2015) [10.1109/DRC.2015.7175570].
Graphene-base heterojunction transistors for post-CMOS high-speed applications: Hopes and challenges
DI LECCE, VALERIO;GNUDI, ANTONIO;GNANI, ELENA;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2015
Abstract
We compare through numerical simulations a Si GBHT and a SiGe HBT: the fT limit of GBHTs is predicted to be more than twice as high as for HBTs assuming a transparent graphene/Si interface; if a more realistic interface model extrapolated from existing experiments is used, the fT limit drops by about two orders of magnitude.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
