A theoretical and experimental investigation on the electron impact ionization in silicon has been carried out in a temperature range up to about 1000 K. The proposed impact-ionization model amply extends the range of simulation tools up to temperatures which are important to predict the failure threshold of ESD-protection and power devices. Different protection diodes are investigated with electro-thermal simulation and transient interferometric thermal-mapping experiments in a new complementary approach. The prediction capability of the simulation tool is validated up to the thermal failure of the p-n junction. The temperature distribution and its dynamics during the application of high-current pulses are studied by comparing the calculated and experimental optical phase shifts: a quantitative agreement both in temporal evolution and thermal distribution is obtained up to temperatures of the order of 1000 K. ©2007 American Institute of Physics
Experimental Investigation on Carrier Dynamics at the Thermal Breakdown / S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. Denison; N. Jensen; G. Groos; M. Stecher. - STAMPA. - 893:(2007), pp. 1497-1498. (Intervento presentato al convegno 28th International Conference on the Physics of Semiconductors (ICPS 2006) tenutosi a Vienna, Austria nel 24-28 July, 2006).
Experimental Investigation on Carrier Dynamics at the Thermal Breakdown
REGGIANI, SUSANNA;GNANI, ELENA;RUDAN, MASSIMO;BACCARANI, GIORGIO;
2007
Abstract
A theoretical and experimental investigation on the electron impact ionization in silicon has been carried out in a temperature range up to about 1000 K. The proposed impact-ionization model amply extends the range of simulation tools up to temperatures which are important to predict the failure threshold of ESD-protection and power devices. Different protection diodes are investigated with electro-thermal simulation and transient interferometric thermal-mapping experiments in a new complementary approach. The prediction capability of the simulation tool is validated up to the thermal failure of the p-n junction. The temperature distribution and its dynamics during the application of high-current pulses are studied by comparing the calculated and experimental optical phase shifts: a quantitative agreement both in temporal evolution and thermal distribution is obtained up to temperatures of the order of 1000 K. ©2007 American Institute of PhysicsI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
