The present work deals with the investigation of performance of differently shaped piezoresistive sensors in hydrogenated amorphous silicon. Such sensors, applied on a glass specimen by a deposition technique, have a very small size: dimensions of sensing areas never exceed 1 mm. Sensors were statically calibrated under pure bending moment: a linear relationship was observed between outputs and specimen strains and a gain factor was calculated to relate them. Moreover, the strict analogy between each sensor and a full Wheatstone bridge was observed. The purpose of this paper was to discuss the robustness of response, potentially dependent of the length of connections to the acquisition device. For each configuration, tests were performed with short (150 mm) and long cables (3 m) at four load levels, with three replications. Finally data were processed in a two-factor ANOVA showing that no influence is due to cables length at the 5% significance level.

A DOE analysis on the robustness of miniaturized silicon stress sensors response / G. Olmi. - STAMPA. - (2007), pp. 263-266. (Intervento presentato al convegno The 6th Youth Symposium on Experimental Solid Mechanics tenutosi a Vrnjacka Banja, Serbia nel 9-12 maggio 2007).

A DOE analysis on the robustness of miniaturized silicon stress sensors response

OLMI, GIORGIO
2007

Abstract

The present work deals with the investigation of performance of differently shaped piezoresistive sensors in hydrogenated amorphous silicon. Such sensors, applied on a glass specimen by a deposition technique, have a very small size: dimensions of sensing areas never exceed 1 mm. Sensors were statically calibrated under pure bending moment: a linear relationship was observed between outputs and specimen strains and a gain factor was calculated to relate them. Moreover, the strict analogy between each sensor and a full Wheatstone bridge was observed. The purpose of this paper was to discuss the robustness of response, potentially dependent of the length of connections to the acquisition device. For each configuration, tests were performed with short (150 mm) and long cables (3 m) at four load levels, with three replications. Finally data were processed in a two-factor ANOVA showing that no influence is due to cables length at the 5% significance level.
2007
The 6th Youth Symposium on Experimental Solid Mechanics - Proceedings
263
266
A DOE analysis on the robustness of miniaturized silicon stress sensors response / G. Olmi. - STAMPA. - (2007), pp. 263-266. (Intervento presentato al convegno The 6th Youth Symposium on Experimental Solid Mechanics tenutosi a Vrnjacka Banja, Serbia nel 9-12 maggio 2007).
G. Olmi
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/46870
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