The influence of the crystal orientation on the performance of silicon-based Graphene-Base Heterojunction Transistors (GBHTs) for terahertz operation is investigated by means of an in-house developed simulator based on quantum transport coupled with Poisson equation. The effect of impurity scattering is included, finding that terahertz operation is possible even considering the reduction of the mobility due to dopants.
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation / Valerio, Di Lecce; Roberto, Grassi; Antonio, Gnudi; Elena, Gnani; Susanna, Reggiani; Giorgio, Baccarani. - STAMPA. - (2014), pp. 313-316. (Intervento presentato al convegno 2014 44th European Solid State Device Research Conference (ESSDERC) tenutosi a Venice, Italy nel Sept 22-26, 2014) [10.1109/ESSDERC.2014.6948823].
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation
DI LECCE, VALERIO;GRASSI, ROBERTO;GNUDI, ANTONIO;GNANI, ELENA;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2014
Abstract
The influence of the crystal orientation on the performance of silicon-based Graphene-Base Heterojunction Transistors (GBHTs) for terahertz operation is investigated by means of an in-house developed simulator based on quantum transport coupled with Poisson equation. The effect of impurity scattering is included, finding that terahertz operation is possible even considering the reduction of the mobility due to dopants.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
