In high-voltage integrated circuits operating at high temperatures, charge transport phenomena can occur in the encapsulation layer as a consequence of the electric field spreading out from the high-voltage bondpads/bondwires. In this work, the most relevant features of epoxy resins commonly used in the high-voltage packaging industry have been modelled and implemented in a commercial TCAD tool. Although the study has been performed on a 2D simulation domain, it is shown that very good agreement with measurements can be obtained, provided that appropriate boundary conditions are taken into account. The TCAD investigation highlights the role played by metallization and wires during a high-voltage stress over a wide temperature range.

TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime / Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Denison, M.. - STAMPA. - (2014), pp. 325-328. (Intervento presentato al convegno 44th European Solid State Device Research Conference (ESSDERC) tenutosi a Venice, Italy nel Sept 22-26, 2014) [10.1109/ESSDERC.2014.6948826].

TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime

IMPERIALE, ILARIA;REGGIANI, SUSANNA;GNANI, ELENA;GNUDI, ANTONIO;BACCARANI, GIORGIO;
2014

Abstract

In high-voltage integrated circuits operating at high temperatures, charge transport phenomena can occur in the encapsulation layer as a consequence of the electric field spreading out from the high-voltage bondpads/bondwires. In this work, the most relevant features of epoxy resins commonly used in the high-voltage packaging industry have been modelled and implemented in a commercial TCAD tool. Although the study has been performed on a 2D simulation domain, it is shown that very good agreement with measurements can be obtained, provided that appropriate boundary conditions are taken into account. The TCAD investigation highlights the role played by metallization and wires during a high-voltage stress over a wide temperature range.
2014
Proceedings of the 2014 44th European Solid State Device Research Conference (ESSDERC 2014)
325
328
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime / Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Denison, M.. - STAMPA. - (2014), pp. 325-328. (Intervento presentato al convegno 44th European Solid State Device Research Conference (ESSDERC) tenutosi a Venice, Italy nel Sept 22-26, 2014) [10.1109/ESSDERC.2014.6948826].
Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Denison, M.
File in questo prodotto:
Eventuali allegati, non sono esposti

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/463579
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 5
  • ???jsp.display-item.citation.isi??? 2
social impact