Different AC pulsed stress signals have been applied to an n-type LDMOS with shallow-trench isolation (STI). The HCS degradation curves have been measured on wafer by varying frequency and duty-cycle under a high-VDS stress for both low and high Vgs biases. The linear drain current drifts have been also investigated through TCAD predictions under AC stress conditions for the first time. A quantitative explanation of the dependence on frequency and duty cycle has been obtained using the new approach based on physical models. An extended analysis of the HCS degradation in a real switching application through a resistive load has been reported to gain an insight on the role played by the peak-HCS rates during the rising/falling edges.
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions / Federico, Monti; Susanna, Reggiani; Barone, G.; Elena, Gnani; Antonio, Gnudi; Giorgio, Baccarani; Poli, S.; Chuang, M.-Y.; Tian, W.; Varghese, D.; Wise, R.. - STAMPA. - (2014), pp. 333-336. (Intervento presentato al convegno 2014 44th European Solid State Device Research Conference (ESSDERC 2014) tenutosi a Venice, Italy nel Sept 22-26, 2014) [10.1109/ESSDERC.2014.6948828].
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions
MONTI, FEDERICO;REGGIANI, SUSANNA;GNANI, ELENA;GNUDI, ANTONIO;BACCARANI, GIORGIO;
2014
Abstract
Different AC pulsed stress signals have been applied to an n-type LDMOS with shallow-trench isolation (STI). The HCS degradation curves have been measured on wafer by varying frequency and duty-cycle under a high-VDS stress for both low and high Vgs biases. The linear drain current drifts have been also investigated through TCAD predictions under AC stress conditions for the first time. A quantitative explanation of the dependence on frequency and duty cycle has been obtained using the new approach based on physical models. An extended analysis of the HCS degradation in a real switching application through a resistive load has been reported to gain an insight on the role played by the peak-HCS rates during the rising/falling edges.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.