A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs is developed and compared with full-quantum simulation data. It will be shown that the pure analytical solution perfectly matches the kp data at high VDS. However, a coupling with the numerical solution of the 1D Poisson equation in the transverse direction is necessary at low VDS, in order to properly describe the charge density in equilibrium with the drain contact. With such an approach we are able to correctly predict the potential profile for both the linear and saturation regimes.
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs / Villani, F.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G.. - STAMPA. - (2014), pp. 262-265. (Intervento presentato al convegno 2014 44th European Solid State Device Research Conference (ESSDERC) tenutosi a Venice, Italy nel Sept 22-26, 2014) [10.1109/ESSDERC.2014.6948810].
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs
VILLANI, FEDERICA;GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2014
Abstract
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs is developed and compared with full-quantum simulation data. It will be shown that the pure analytical solution perfectly matches the kp data at high VDS. However, a coupling with the numerical solution of the 1D Poisson equation in the transverse direction is necessary at low VDS, in order to properly describe the charge density in equilibrium with the drain contact. With such an approach we are able to correctly predict the potential profile for both the linear and saturation regimes.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
