Full-band Monte Carlo simulation of short-channel Double-Gate SOI MOSFETs were used to assess possible improvement of drain current in devices featuring conduction-band offsets between the source and the channel, obyained adopting non-conventional materials for the source and drain regions.
Monte Carlo simulation of MOSFETs with band-offsets in the source and drain / M. Braccioli; P. Palestri; T. Poiroux; M. Vinet; G. Le Carval; M. Mouis; C. Fiegna; E. Sangiorgi. - STAMPA. - (2007), pp. 39-42. (Intervento presentato al convegno ULIS 2007 tenutosi a Leuven, Belgium nel 15, 16 March 2007).
Monte Carlo simulation of MOSFETs with band-offsets in the source and drain
BRACCIOLI, MARCO;FIEGNA, CLAUDIO;SANGIORGI, ENRICO
2007
Abstract
Full-band Monte Carlo simulation of short-channel Double-Gate SOI MOSFETs were used to assess possible improvement of drain current in devices featuring conduction-band offsets between the source and the channel, obyained adopting non-conventional materials for the source and drain regions.File in questo prodotto:
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