THIS Special Issue presents significant results from recent research studies on the “Characterization of Nano CMOS Variability by Simulation and Measurements.” Due to the continuous scaling of the transistor dimensions and the rapid introduction of the 32-nm and 22-nm technology nodes, the variability of transistor characteristics has become a major concern associated with the further scaling and integration of CMOS.

Special Issue on Characterization of Nano CMOS Variability by Simulation and Measurements

SANGIORGI, ENRICO;
2011

Abstract

THIS Special Issue presents significant results from recent research studies on the “Characterization of Nano CMOS Variability by Simulation and Measurements.” Due to the continuous scaling of the transistor dimensions and the rapid introduction of the 32-nm and 22-nm technology nodes, the variability of transistor characteristics has become a major concern associated with the further scaling and integration of CMOS.
2011
636
Enrico Sangiorgi;Asen Asenov;Herbert S. Bennett;Robert W. Dutton;David Esseni;Martin D. Giles;Masami Hane;Kenji Nishi;Jeewika Ranaweera;Siegfried Selberherr
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/398217
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