THIS Special Issue presents significant results from recent research studies on the “Characterization of Nano CMOS Variability by Simulation and Measurements.” Due to the continuous scaling of the transistor dimensions and the rapid introduction of the 32-nm and 22-nm technology nodes, the variability of transistor characteristics has become a major concern associated with the further scaling and integration of CMOS.
Special Issue on Characterization of Nano CMOS Variability by Simulation and Measurements
SANGIORGI, ENRICO;
2011
Abstract
THIS Special Issue presents significant results from recent research studies on the “Characterization of Nano CMOS Variability by Simulation and Measurements.” Due to the continuous scaling of the transistor dimensions and the rapid introduction of the 32-nm and 22-nm technology nodes, the variability of transistor characteristics has become a major concern associated with the further scaling and integration of CMOS.File in questo prodotto:
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