A theoretical and experimental investigation on the electron impact ionization in silicon has been carried out in the temperature range between 300 and773 K. The impact-ionization model proposed here amply extends the range of simulation tools up to nearly 800 K, which is especially important in order to predict the failure threshold of ESD-protection and power devices.
Experimental extraction of the electron impact-ionization coefficient at large operating temperatures / S. REGGIANI; M. RUDAN; E. GNANI; BACCARANI G.; C. CORVASCE; D. BARLINI; M. CIAPPA; W. FICHTNER; M. DENISON; N. JENSEN; G. GROOS; M. STECHER. - STAMPA. - (2004), pp. 407-410. (Intervento presentato al convegno International Electron Device Meeting (IEDM-2004) tenutosi a San Francisco nel 13-15 Dicembre 2004).
Experimental extraction of the electron impact-ionization coefficient at large operating temperatures
REGGIANI, SUSANNA;RUDAN, MASSIMO;GNANI, ELENA;BACCARANI, GIORGIO;
2004
Abstract
A theoretical and experimental investigation on the electron impact ionization in silicon has been carried out in the temperature range between 300 and773 K. The impact-ionization model proposed here amply extends the range of simulation tools up to nearly 800 K, which is especially important in order to predict the failure threshold of ESD-protection and power devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.