In this work we address the problem of field- and temperature-dependence of the impact-ionization coefficient in silicon. A careful prediction of the impact ionization phenomenon is essential for the design of devices working in high-current/voltage conditions, where self heating is relevant. A new model is proposed, fitted on first-principle calculations, that demonstrates the essential role played by the non-equilibrium Auger effect, which is neglected in standard approaches. The model is corroborated by a theoretical analysis, that confirms the numerical findings about the field and temperature dependence.
Investigation about the high temperature impact-ionization coefficient in silicon / S. REGGIANI; M. RUDAN; E. GNANI; G. BACCARANI. - STAMPA. - (2004), pp. 245-248. (Intervento presentato al convegno European Solid-State Device Research Conference (ESSDERC-2004) tenutosi a Leuven, BE nel 21-23 Settembre 2004).
Investigation about the high temperature impact-ionization coefficient in silicon
REGGIANI, SUSANNA;RUDAN, MASSIMO;GNANI, ELENA;BACCARANI, GIORGIO
2004
Abstract
In this work we address the problem of field- and temperature-dependence of the impact-ionization coefficient in silicon. A careful prediction of the impact ionization phenomenon is essential for the design of devices working in high-current/voltage conditions, where self heating is relevant. A new model is proposed, fitted on first-principle calculations, that demonstrates the essential role played by the non-equilibrium Auger effect, which is neglected in standard approaches. The model is corroborated by a theoretical analysis, that confirms the numerical findings about the field and temperature dependence.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.