Two C-band monolithic high power amplifiers (HPAs) have been designed and implemented exploiting a 0.25-μm AlGaN/GaN HEMT process on an SiC substrate. The circuits have been designed for use in transmit/recevie modules of satellite synthetic aperture radar antennas for Earth observation. The design was accurately focused on the HEMTs' electrical and thermal working conditions in order to guarantee the reliable operation required by space applications. The HPAs operate in pulsed conditions with typical pulsewidth of 50 μs and 10% duty cycle: in that regime, the circuits deliver about 40 W with more than 21-dB associated gain and 40% to 45% power-added efficiency in the 5-5.8-GHz band. The achieved performance clearly demonstrates the very high potentiality of this technology for the replacement of GaAs-based HPAs in new generations of this type of systems.
Design of 40-W AlGaN/GaN MMIC High Power Amplifiers for C-Band SAR Applications / Corrado Florian;Rafael Cignani;Alberto Santarelli;Fabio Filicori. - In: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. - ISSN 0018-9480. - STAMPA. - 61:(2013), pp. 4492-4504. [10.1109/TMTT.2013.2286109]
Design of 40-W AlGaN/GaN MMIC High Power Amplifiers for C-Band SAR Applications
FLORIAN, CORRADO;CIGNANI, RAFAEL;SANTARELLI, ALBERTO;FILICORI, FABIO
2013
Abstract
Two C-band monolithic high power amplifiers (HPAs) have been designed and implemented exploiting a 0.25-μm AlGaN/GaN HEMT process on an SiC substrate. The circuits have been designed for use in transmit/recevie modules of satellite synthetic aperture radar antennas for Earth observation. The design was accurately focused on the HEMTs' electrical and thermal working conditions in order to guarantee the reliable operation required by space applications. The HPAs operate in pulsed conditions with typical pulsewidth of 50 μs and 10% duty cycle: in that regime, the circuits deliver about 40 W with more than 21-dB associated gain and 40% to 45% power-added efficiency in the 5-5.8-GHz band. The achieved performance clearly demonstrates the very high potentiality of this technology for the replacement of GaAs-based HPAs in new generations of this type of systems.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
