Standard dynamic characterization methods based on periodic narrow-pulse low duty-cycle excitation waveforms provide suboptimal I/V curves when used along with GaN field effect transistors (FETs), due to complex nonlinear charge trapping effects. Thus, a double-pulse technique for the dynamic characterization of GaN FETs is here presented. The double-pulsed I/V characteristics are shown to be not only isothermal but also corresponding to a fixed charge trapping state.
A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs / Alberto Santarelli;Rafael Cignani;Gian Piero Gibiino;Daniel Niessen;Pier Andrea Traverso;Corrado Florian;Dominique M. M. -P. Schreurs;Fabio Filicori. - In: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS. - ISSN 1531-1309. - STAMPA. - 24:(2014), pp. 132-134. [10.1109/LMWC.2013.2290216]
A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs
SANTARELLI, ALBERTO;CIGNANI, RAFAEL;GIBIINO, GIAN PIERO;NIESSEN, DANIEL;TRAVERSO, PIER ANDREA;FLORIAN, CORRADO;FILICORI, FABIO
2014
Abstract
Standard dynamic characterization methods based on periodic narrow-pulse low duty-cycle excitation waveforms provide suboptimal I/V curves when used along with GaN field effect transistors (FETs), due to complex nonlinear charge trapping effects. Thus, a double-pulse technique for the dynamic characterization of GaN FETs is here presented. The double-pulsed I/V characteristics are shown to be not only isothermal but also corresponding to a fixed charge trapping state.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
