A new TCAD-based approach is used to investigate hot-carrier stress (HCS) effects, especially suited for power devices. Physically-based degradation models are used to determine the interface trap generation at different stress biases and ambient temperatures. Special attention has been given to the high current-voltage regimes, when significant self-heating effects and impact ionization play a relevant role. By monitoring the linear and saturation regimes of a rugged LDMOS at different stress biases and times, the spatial and energetic distribution of acceptor- and donor-type traps has been investigated for the first time confirming the experimental results.

TCAD predictions of linear and saturation HCS degradation in STI-based LDMOS transistors stressed in the impact-ionization regime

REGGIANI, SUSANNA;BARONE, GAETANO;GNANI, ELENA;GNUDI, ANTONIO;BACCARANI, GIORGIO;
2013

Abstract

A new TCAD-based approach is used to investigate hot-carrier stress (HCS) effects, especially suited for power devices. Physically-based degradation models are used to determine the interface trap generation at different stress biases and ambient temperatures. Special attention has been given to the high current-voltage regimes, when significant self-heating effects and impact ionization play a relevant role. By monitoring the linear and saturation regimes of a rugged LDMOS at different stress biases and times, the spatial and energetic distribution of acceptor- and donor-type traps has been investigated for the first time confirming the experimental results.
2013
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
375
378
S. Reggiani;G. Barone;E. Gnani;A. Gnudi;G. Baccarani;S. Poli;M.-Y. Chuang;W. Tian;R. Wise
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/238893
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