n+/p diodes have been realized by 300°C phosphorus ion implantation and subsequent annealing at 1300°C. An electrical characterization of the devices as well as a study of the defects introduced by the implantation process has been made. I-V measurements pointed out that the diodes maintain a good rectifying behavior up to 737K. DLTS analyses detected the presence of three traps, T2, T3 and T4, which are not due to the implantation process, and a high energy trap, T5, that could be related to the surface states at the Ni/SiC interface.
n+/p diodes Realized in SiC by 300°C Phosphorus ion implantation: electrical characterizaztion as a function of temperature / M. Canino; A. Castaldini; A. Cavallini; F. Moscatelli; R. Nipoti; A. Poggi. - STAMPA. - 483-485:(2005), pp. 649-652. (Intervento presentato al convegno ECRSCRM2004 tenutosi a Bologna, Italy nel 31 August - 4 September 2004) [10.4028/www.scientific.net/MSF.483-485.649].
n+/p diodes Realized in SiC by 300°C Phosphorus ion implantation: electrical characterizaztion as a function of temperature
CANINO, MARIACONCETTA;CASTALDINI, ANTONIO;CAVALLINI, ANNA;NIPOTI, RENATA;POGGI, ANDREA
2005
Abstract
n+/p diodes have been realized by 300°C phosphorus ion implantation and subsequent annealing at 1300°C. An electrical characterization of the devices as well as a study of the defects introduced by the implantation process has been made. I-V measurements pointed out that the diodes maintain a good rectifying behavior up to 737K. DLTS analyses detected the presence of three traps, T2, T3 and T4, which are not due to the implantation process, and a high energy trap, T5, that could be related to the surface states at the Ni/SiC interface.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
