Gate-lag transients and "hole-like" deep level transient spectroscopy signals from AlGaAs-GaAs heterostructure field-effect transistors are shown to be suppressed by illumination with photons with energy larger than the AlGaAs bandgap. The observed pulse-response dependence on light intensity is reproduced and explained by two-dimensional numerical device simulations based on hole-trap behavior of surface deep levels.
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs / G. Verzellesi; A. Cavallini; A.F.Basile; A. Castaldini;C. Canali;. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 25:(2004), pp. 517-519. [10.1109/LED.2004.831965]
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs
CAVALLINI, ANNA;CASTALDINI, ANTONIO;
2004
Abstract
Gate-lag transients and "hole-like" deep level transient spectroscopy signals from AlGaAs-GaAs heterostructure field-effect transistors are shown to be suppressed by illumination with photons with energy larger than the AlGaAs bandgap. The observed pulse-response dependence on light intensity is reproduced and explained by two-dimensional numerical device simulations based on hole-trap behavior of surface deep levels.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.