We have investigated the electrical activation of Fe implanted in InP in different concentrations and we have characterized by DLTS and by C-V analyses the electrical activity of the deep levels present in the band gap.
Deep levels characterization in high temperature iron implanted InP / B.Fraboni; A.Gasparotto; T.Cesca; A. Verna; G.Impellizzeri; F.Priolo. - ELETTRONICO. - (2005). (Intervento presentato al convegno Indium Phosphide and related Materials INPRM 2005 tenutosi a Glasgow U.K. nel 18-22 maggio 2005).
Deep levels characterization in high temperature iron implanted InP
FRABONI, BEATRICE;
2005
Abstract
We have investigated the electrical activation of Fe implanted in InP in different concentrations and we have characterized by DLTS and by C-V analyses the electrical activity of the deep levels present in the band gap.File in questo prodotto:
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