We report on the defect influence on the electrical properties of 4H-SiC Schottky diodes. The devices were fabricated on a n-type epilayer treated by chemical mechanical polishing. A surface defect map allows to correlate the defect presence to the electrical behavior of the devices. We find that the devices realized on a free defect zone and on micropipes do not show important differences in electrical parameters.
Defect influence on the electrcal properties of 4H-SiC Schottky Diodes / S.Porro; S.Ferrero; F.Giorgis; C.F.Pirri; D.Perrone; U.Meotto; P.Mandracci; L.Scaltrito; G.Richieri; L.Merlin; A.Cavallini; A.Castaldini; M.Rossi. - STAMPA. - 457-460:(2004), pp. 1081-1084. [10.4028/www.scientific.net/MSF.457-460.1081]
Defect influence on the electrcal properties of 4H-SiC Schottky Diodes
CAVALLINI, ANNA;CASTALDINI, ANTONIO;ROSSI, MARCO
2004
Abstract
We report on the defect influence on the electrical properties of 4H-SiC Schottky diodes. The devices were fabricated on a n-type epilayer treated by chemical mechanical polishing. A surface defect map allows to correlate the defect presence to the electrical behavior of the devices. We find that the devices realized on a free defect zone and on micropipes do not show important differences in electrical parameters.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
