We have studied the electrical activation of the Fe2+/3+ trap in Fe implanted InP by means of capacitance-voltage and deep level transient spectroscopy analyses. Five deep traps have been identified and we have characterized the concentration and depth distribution of the Fe2+/3+ deep trap, located at EC-0.66 eV. The InP substrate background doping, i.e. the Fermi level position, results to play a crucial role in the Fe activation process by setting an upper limit to the amount of Fe centers electrically activated as deep acceptor traps.

Electrical activation of the Fe2+/3+ trap in Fe implanted InP

FRABONI, BEATRICE;
2005

Abstract

We have studied the electrical activation of the Fe2+/3+ trap in Fe implanted InP by means of capacitance-voltage and deep level transient spectroscopy analyses. Five deep traps have been identified and we have characterized the concentration and depth distribution of the Fe2+/3+ deep trap, located at EC-0.66 eV. The InP substrate background doping, i.e. the Fermi level position, results to play a crucial role in the Fe activation process by setting an upper limit to the amount of Fe centers electrically activated as deep acceptor traps.
2005
B.Fraboni; A.Gasparotto; T.Cesca; A. Verna; G.Impellizzeri; F.Priolo
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/18762
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