This paper presents a new and simple method for characterizing the thermal behavior of Heterojunction Bipolar Transistors, based on DC, AC and low frequency small signal measures of H (hybrid) parameters. Static characterization of the thermal behavior is achieved through the calculation of a thermal resistance, while a thermal impedance is used to describe thermal dynamic behavior. Validation results for the method obtained from both simulations and experimental data are included in the paper for a 10x2x40 µm InGaP/GaAs power HBT.
A Simple Technique for Measuring the Thermal Impedance and the Thermal Resistance of HBTs / Lonac J. A. ; Santarelli A. ; Melczarsky I. ; Filicori F.. - STAMPA. - (2005), pp. 197-200. (Intervento presentato al convegno 13th Gallium Arsenide and other Compound Semiconductors Application Symposium tenutosi a Paris (France) nel 3-7 Oct. 2005).
A Simple Technique for Measuring the Thermal Impedance and the Thermal Resistance of HBTs
LONAC, JULIO ANDRES;SANTARELLI, ALBERTO;MELCZARSKY, ILAN;FILICORI, FABIO
2005
Abstract
This paper presents a new and simple method for characterizing the thermal behavior of Heterojunction Bipolar Transistors, based on DC, AC and low frequency small signal measures of H (hybrid) parameters. Static characterization of the thermal behavior is achieved through the calculation of a thermal resistance, while a thermal impedance is used to describe thermal dynamic behavior. Validation results for the method obtained from both simulations and experimental data are included in the paper for a 10x2x40 µm InGaP/GaAs power HBT.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
