We have investigated the structural and electrical behavior of Fe centers introduced in InP by high temperature ion implantation. The effect of post-implantation annealing treatments on the crystal damage and the lattice location of the Fe atoms was studied by PIXE-RBS-channeling measurements. Current-voltage measurements and simulations were used to characterize the electrical properties due to the presence of Fe-related deep traps. The results show that the background n-doping density plays a crucial role in controlling the annealing behavior and the electrical activation of the Fe centers.
Ion Beam Analyses and electrical characterization of substitutional Fe properties in Fe implanted InP / T. Cesca; A. Verna; G. Mattei; A. Gasparotto; B. Fraboni; G. Impellizzeri; F. Priolo. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS. - ISSN 0168-583X. - STAMPA. - 249:1-2(2006), pp. 894-896. [10.1016/j.nimb.2006.03.158]
Ion Beam Analyses and electrical characterization of substitutional Fe properties in Fe implanted InP
FRABONI, BEATRICE;
2006
Abstract
We have investigated the structural and electrical behavior of Fe centers introduced in InP by high temperature ion implantation. The effect of post-implantation annealing treatments on the crystal damage and the lattice location of the Fe atoms was studied by PIXE-RBS-channeling measurements. Current-voltage measurements and simulations were used to characterize the electrical properties due to the presence of Fe-related deep traps. The results show that the background n-doping density plays a crucial role in controlling the annealing behavior and the electrical activation of the Fe centers.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
