Low temperature annealing of electron irradiation-induced deep levels in 4H-SiC is reported. The major deep level transient spectroscopy peak S2 associated with the energy level at Ec−0.39 eV disappears in the temperature range 360–400 K, and some rearrangement of the peak S3, associated with the defect Z1 /Z2 with energy level at Ec−0.5/Ec−0.65 eV occurs in the temperature interval 400–470 K. A net free charge carrier concentration increase goes along with the disappearance of peak S2 at Ec−0.39 eV, whereas the charge collection efficiency of the diode does not experience any significant change. An interpretation of the annealing of peak S2 on a microscopic scale is given.
Low temperature annealing of electron irradiation induced defects in 4H-SiC / A.Cavallini; A.Castaldini; L.Rigutti; F.Nava;. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 85:(2004), pp. 3780-3782. [10.1063/1.1810627]
Low temperature annealing of electron irradiation induced defects in 4H-SiC
CAVALLINI, ANNA;CASTALDINI, ANTONIO;RIGUTTI, LORENZO;
2004
Abstract
Low temperature annealing of electron irradiation-induced deep levels in 4H-SiC is reported. The major deep level transient spectroscopy peak S2 associated with the energy level at Ec−0.39 eV disappears in the temperature range 360–400 K, and some rearrangement of the peak S3, associated with the defect Z1 /Z2 with energy level at Ec−0.5/Ec−0.65 eV occurs in the temperature interval 400–470 K. A net free charge carrier concentration increase goes along with the disappearance of peak S2 at Ec−0.39 eV, whereas the charge collection efficiency of the diode does not experience any significant change. An interpretation of the annealing of peak S2 on a microscopic scale is given.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
