In this work we model the junctionless UTB SOI FET. An improved depletion approximation provides an accurate solution of Poisson’s equation accounting for the influence of the substrate, back-oxide and interface-trap charges on the device current. The model is validated by comparison with TCAD simulation results. Analytical expressions of the FET threshold voltage and subthreshold slope are worked out against the substrate voltage, highlighting the effect of the substrate doping and back-oxide thickness on the above parameters.
Physical Model of the Junctionless UTB SOI-FET / Gnani, Elena; Reggiani, Susanna; Gnudi, Antonio; Baccarani, Giorgio. - ELETTRONICO. - 59:4(2012), pp. 941-948. (Intervento presentato al convegno 8th European Workshop on Silicon on Insulator Technology, Devices and Circuits (EUROSOI 2012) tenutosi a Montpellier nel 23-25 January) [10.1109/TED.2011.2182353].
Physical Model of the Junctionless UTB SOI-FET
GNANI, ELENA;REGGIANI, SUSANNA;GNUDI, ANTONIO;BACCARANI, GIORGIO
2012
Abstract
In this work we model the junctionless UTB SOI FET. An improved depletion approximation provides an accurate solution of Poisson’s equation accounting for the influence of the substrate, back-oxide and interface-trap charges on the device current. The model is validated by comparison with TCAD simulation results. Analytical expressions of the FET threshold voltage and subthreshold slope are worked out against the substrate voltage, highlighting the effect of the substrate doping and back-oxide thickness on the above parameters.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
