We discuss the phenomenon of negative output differential resistance of short-channel graphene FETs at room temperature, whose physical origin arises from a transport-mode bottleneck induced by the contact-doped graphene. We outline a simple semianalytical model, based on semiclassical ballistic transport, which captures this effect and qualitatively reproduces results from the non-equilibrium Green's function approach (NEGF). We find that this effect is robust against phonon scattering.
Negative differential resistance in short-channel graphene FETs: semianalytical model and simulations / R. Grassi; T. Low; A. Gnudi; G. Baccarani. - STAMPA. - (2012), pp. 107-108. (Intervento presentato al convegno 70th Device Research Conference (DRC) tenutosi a Pennsylvania State University, Universtity Park, PA, USA nel June 18-20, 2012) [10.1109/DRC.2012.6256975].
Negative differential resistance in short-channel graphene FETs: semianalytical model and simulations
GRASSI, ROBERTO;GNUDI, ANTONIO;BACCARANI, GIORGIO
2012
Abstract
We discuss the phenomenon of negative output differential resistance of short-channel graphene FETs at room temperature, whose physical origin arises from a transport-mode bottleneck induced by the contact-doped graphene. We outline a simple semianalytical model, based on semiclassical ballistic transport, which captures this effect and qualitatively reproduces results from the non-equilibrium Green's function approach (NEGF). We find that this effect is robust against phonon scattering.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
