Large threshold voltage shifts (ΔVt) are experimentally observed in n-channel LDMOS transistors under high current-voltage regime. The effect is enhanced by the gate voltage as well as by the ambient temperature (TA). By approximating the curves with the usually adopted power-law dependency (ΔVt = Atn), two different contributions are observed and a clear increase of the exponent n is found. A numerical investigation is carried out, revealing that the electric field normal to the oxide interface (En) as well as the internal temperature (T) close to the source side of the MOS channel are mainly responsible for such enhanced degradation.
Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors / S. Poli; S. Reggiani; M. Denison; E. Gnani; A. Gnudi; G. Baccarani; S. Pendharkar; R. Wise. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 32:(2011), pp. 791-793. [10.1109/LED.2011.2135835]
Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors
POLI, STEFANO;REGGIANI, SUSANNA;GNANI, ELENA;GNUDI, ANTONIO;BACCARANI, GIORGIO;
2011
Abstract
Large threshold voltage shifts (ΔVt) are experimentally observed in n-channel LDMOS transistors under high current-voltage regime. The effect is enhanced by the gate voltage as well as by the ambient temperature (TA). By approximating the curves with the usually adopted power-law dependency (ΔVt = Atn), two different contributions are observed and a clear increase of the exponent n is found. A numerical investigation is carried out, revealing that the electric field normal to the oxide interface (En) as well as the internal temperature (T) close to the source side of the MOS channel are mainly responsible for such enhanced degradation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
