GaN based heterostructures have recently gained increased interest due to their applications for high electron mobility transistors. In this letter AlInN/AlN/GaN heterojunctions grown by metal-organic chemical-vapor deposition with different AlN thicknesses have been investigated by surface photovoltage spectroscopy. The density of the two-dimensional electron gas (2DEG) forming at the interface has been measured by Hall effect. A band gap shift has been detected and its dependence on the 2DEG electron density at the AlN/GaN interface has been analyzed on the basis of the Moss–Burstein and renormalization effects.
Band gap shift in Al1−xInxN/AlN/GaN heterostructures studied by surface photovoltage spectroscopy / D.Cavalcoli; S. Pandey; B. Fraboni; A. Cavallini. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 98:(2011), pp. 142111-142114. [10.1063/1.3576938]
Band gap shift in Al1−xInxN/AlN/GaN heterostructures studied by surface photovoltage spectroscopy
CAVALCOLI, DANIELA;FRABONI, BEATRICE;CAVALLINI, ANNA
2011
Abstract
GaN based heterostructures have recently gained increased interest due to their applications for high electron mobility transistors. In this letter AlInN/AlN/GaN heterojunctions grown by metal-organic chemical-vapor deposition with different AlN thicknesses have been investigated by surface photovoltage spectroscopy. The density of the two-dimensional electron gas (2DEG) forming at the interface has been measured by Hall effect. A band gap shift has been detected and its dependence on the 2DEG electron density at the AlN/GaN interface has been analyzed on the basis of the Moss–Burstein and renormalization effects.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
