TALLARICO, ANDREA NATALE
TALLARICO, ANDREA NATALE
DIPARTIMENTO DI INGEGNERIA DELL'ENERGIA ELETTRICA E DELL'INFORMAZIONE "GUGLIELMO MARCONI"
Ricercatori a tempo determinato
A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter
2022 Capasso G.; Zanuccoli M.; Tallarico A.N.; Fiegna C.
An integrated DC/DC converter with online monitoring of hot-carrier degradation
2019 Pizzotti M.; Crescentini M.; Tallarico A.N.; Romani A.
Characterization and Modeling of BTI in SiC MOSFETs
2019 Cornigli D.; Tallarico A.N.; Reggiani S.; Fiegna C.; Sangiorgi E.; Sanchez L.; Valdivieso C.; Consentino G.; Crupi F.
Failure mode for p-GaN gates under forward gate stress with varying Mg concentration
2017 Stoffels, S.; Bakeroot, B.; Wu, T. L.; Marcon, D.; Posthuma, N. E.; Decoutere, S.; Tallarico, A. N.; Fiegna, C.
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level
2017 Rossetto, I.; Meneghini, M.; Canato, E.; Barbato, M.; Stoffels, S.; Posthuma, N.; Decoutere, S.; Tallarico, A. N.; Meneghesso, G.; Zanoni, E.
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors
2020 Tallarico A.N.; Reggiani S.; Depetro R.; Croce G.; Sangiorgi E.; Fiegna C.
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current
2024 Ercolano F.; Tallarico A.N.; Millesimo M.; Gnani E.; Reggiani S.; Fiegna C.; Borga M.; Posthuma N.; Bakeroot B.
Gate Reliability of p-GaN HEMT with Gate Metal Retraction
2019 Tallarico A.N.; Stoffels S.; Posthuma N.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C.
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition
2022 Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.; Tallarico A.N.
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs
2021 Millesimo M.; Fiegna C.; Posthuma N.; Borga M.; Bakeroot B.; Decoutere S.; Tallarico A.N.
Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation
2018 Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Manzini, Stefano; Torti, Andrea Mario; Croce, Giuseppe; Sangiorgi, Enrico; Fiegna, Claudio
Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture
2018 Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Torti, Andrea Mario; Croce, Giuseppe; Sangiorgi, Enrico; Fiegna, Claudio
Impact of structural and process variations on the time-dependent off-state breakdown of p-gan power hemts
2021 Millesimo M.; Posthuma N.; Bakeroot B.; Borga M.; Decoutere S.; Tallarico A.N.
Impact of the substrate orientation on CHC reliability in n-FinFETs - Separation of the various contributions
2014 Tallarico A.N.; Cho M.; Franco J.; Ritzenthaler R.; Togo M.; Horiguchi N.; Groeseneken G.; Crupi F.
In-Circuit Assessment of the Long-Term Reliability of E-Mode GaN HEMTs
2023 Capasso G.; Zanuccoli M.; Tallarico A.N.; Fiegna C.
Influence of bias and temperature conditions on NBTI physical mechanisms in p-channel power U-MOSFETs
2015 Andrea Natale Tallarico; Paolo Magnone; Giacomo Barletta; Angelo Magrì; Enrico Sangiorgi; Claudio Fiegna
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide
2017 Tallarico, A. N.; Reggiani, S.; Magnone, P.; Croce, G.; Depetro, R.; Gattari, P.; Sangiorgi, E.; Fiegna, C.
Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs
2017 Tallarico, Andrea Natale; Stoffels, Steve; Magnone, Paolo; Posthuma, Niels; Sangiorgi, Enrico; Decoutere, Stefaan; Fiegna, Claudio
Modeling self-heating effects in AlGaN/GaN electronic devices during static and dynamic operation mode
2014 Andrea Natale Tallarico; Paolo Magnone; Enrico Sangiorgi; Claudio Fiegna
Modeling Spatial and Energy Oxide Trap Distribution Responsible for NBTI in p-Channel Power U-MOSFETs
2015 Andrea Natale Tallarico; Paolo Magnone; Giacomo Barletta; Angelo Magrì; Enrico Sangiorgi; Claudio Fiegna
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter | Capasso G.; Zanuccoli M.; Tallarico A.N.; Fiegna C. | 2022-01-01 | - | Editions Frontieres | 4.01 Contributo in Atti di convegno | - |
| An integrated DC/DC converter with online monitoring of hot-carrier degradation | Pizzotti M.; Crescentini M.; Tallarico A.N.; Romani A. | 2019-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | R2Power300_icecs2019_maybefinal shortref.pdf |
| Characterization and Modeling of BTI in SiC MOSFETs | Cornigli D.; Tallarico A.N.; Reggiani S.; Fiegna C.; Sangiorgi E.; Sanchez L.; Valdivieso C.; Con...sentino G.; Crupi F. | 2019-01-01 | - | Editions Frontieres | 4.01 Contributo in Atti di convegno | 08901761 (1).pdf; combinepdfESSDERC2019.pdf |
| Failure mode for p-GaN gates under forward gate stress with varying Mg concentration | Stoffels, S.; Bakeroot, B.; Wu, T. L.; Marcon, D.; Posthuma, N. E.; Decoutere, S.; Tallarico, A. ...N.; Fiegna, C. | 2017-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level | Rossetto, I.; Meneghini, M.; Canato, E.; Barbato, M.; Stoffels, S.; Posthuma, N.; Decoutere, S.; ...Tallarico, A. N.; Meneghesso, G.; Zanoni, E. | 2017-01-01 | MICROELECTRONICS RELIABILITY | - | 1.01 Articolo in rivista | - |
| Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors | Tallarico A.N.; Reggiani S.; Depetro R.; Croce G.; Sangiorgi E.; Fiegna C. | 2020-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | 09129112.pdf; post-print.pdf |
| GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current | Ercolano F.; Tallarico A.N.; Millesimo M.; Gnani E.; Reggiani S.; Fiegna C.; Borga M.; Posthuma N....; Bakeroot B. | 2024-01-01 | - | Springer Science and Business Media Deutschland GmbH | 4.01 Contributo in Atti di convegno | - |
| Gate Reliability of p-GaN HEMT with Gate Metal Retraction | Tallarico A.N.; Stoffels S.; Posthuma N.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C. | 2019-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition | Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.; Tallaric...o A.N. | 2022-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs | Millesimo M.; Fiegna C.; Posthuma N.; Borga M.; Bakeroot B.; Decoutere S.; Tallarico A.N. | 2021-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | Final_Manuscript_merged.pdf |
| Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation | Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Manzini, Stefano; Torti, Andrea ...Mario; Croce, Giuseppe; Sangiorgi, Enrico; Fiegna, Claudio | 2018-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | Hot-Carrier Degradation in Power LDMOS_ Drain Bias Dependence and Lifetime Evaluation.pdf; Post-print_Version.pdf |
| Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture | Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Torti, Andrea Mario; Croce, Gius...eppe; Sangiorgi, Enrico; Fiegna, Claudio | 2018-01-01 | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | - | 1.01 Articolo in rivista | 08255610Tallarico2018.pdf |
| Impact of structural and process variations on the time-dependent off-state breakdown of p-gan power hemts | Millesimo M.; Posthuma N.; Bakeroot B.; Borga M.; Decoutere S.; Tallarico A.N. | 2021-01-01 | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | - | 1.01 Articolo in rivista | Post_print_version.pdf |
| Impact of the substrate orientation on CHC reliability in n-FinFETs - Separation of the various contributions | Tallarico A.N.; Cho M.; Franco J.; Ritzenthaler R.; Togo M.; Horiguchi N.; Groeseneken G.; Crupi F. | 2014-01-01 | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | - | 1.01 Articolo in rivista | - |
| In-Circuit Assessment of the Long-Term Reliability of E-Mode GaN HEMTs | Capasso G.; Zanuccoli M.; Tallarico A.N.; Fiegna C. | 2023-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | In-Circuit_Assessment_of_the_Long-Term_Reliability_of_E-Mode_GaN_HEMTs.pdf |
| Influence of bias and temperature conditions on NBTI physical mechanisms in p-channel power U-MOSFETs | Andrea Natale Tallarico; Paolo Magnone; Giacomo Barletta; Angelo Magrì; Enrico Sangiorgi; Claudio... Fiegna | 2015-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |
| Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide | Tallarico, A. N.; Reggiani, S.; Magnone, P.; Croce, G.; Depetro, R.; Gattari, P.; Sangiorgi, E.; ...Fiegna, C. | 2017-01-01 | MICROELECTRONICS RELIABILITY | - | 1.01 Articolo in rivista | FINAL_MANUSCRIPT_MR.pdf |
| Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs | Tallarico, Andrea Natale; Stoffels, Steve; Magnone, Paolo; Posthuma, Niels; Sangiorgi, Enrico; De...coutere, Stefaan; Fiegna, Claudio | 2017-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | - |
| Modeling self-heating effects in AlGaN/GaN electronic devices during static and dynamic operation mode | Andrea Natale Tallarico; Paolo Magnone; Enrico Sangiorgi; Claudio Fiegna | 2014-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |
| Modeling Spatial and Energy Oxide Trap Distribution Responsible for NBTI in p-Channel Power U-MOSFETs | Andrea Natale Tallarico; Paolo Magnone; Giacomo Barletta; Angelo Magrì; Enrico Sangiorgi; Claudio... Fiegna | 2015-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |