EMINENTE, SIMONE
EMINENTE, SIMONE
DIP. DI ELETTRONICA,INFORMATICA,SISTEMISTICA-DEIS
A Monte-Carlo study of the role of scattering in deca-nanometer MOSFETs
2004 P. Palestri; D. Esseni; S. Eminente; C. Fiegna; E. Sangiorgi; L. Selmi
An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation
2005 P. Palestri; S. Eminente; D. Esseni;C. Fiegna; E. Sangiorgi; L. Selmi
An improved semiclassical Monte-Carlo appproach for nano-scale MOSFET simulation
2004 P. PALESTRI; S. EMINENTE; D. ESSENI; FIEGNA C.; E. SANGIORGI; L. SELMI
Analysis of Ballistic Transport in MOSFETs along the ITRS Roadmap
2005 P.Palestri; S.Eminente; D.Esseni; C.Fiegna; L.Selmi; E.Sangiorgi
Ballistic effects in advanced MOSFETs along the Roadmap
2005 E. Sangiorgi; P. Palestri; S. Eminente; D. Esseni; C. Fiegna; L. Selmi
Comparative analysis of the RF and noise performance of bulk and single-gate ultra-thin SOI MOSFETs by numerical simulation
2004 EMINENTE S.; ALESSANDRINI M.; FIEGNA C.
Comparison of BULK and Ultra-Thin Double Gate SOI MOSFETs for the 65 nm Technology Node: a Monte-Carlo Study
2005 M. Braccioli; S.Eminente; P.Palestri; D.Esseni; C.Fiegna
Enhanced ballisticity in nano-MOSFETs along the ITRS roadmap: A Monte Carlo study
2004 S. Eminente; D. Esseni; P. Palestri; C. Fiegna; L. Selmi; E. Sangiorgi
Monte Carlo Simulation of deca-nanometer MOSFETs for Analog/Mixed-Signal and RF applications
2006 S. Eminente; N. Barin; P. Palestri; C. Fiegna; E. Sangiorgi
Small-signal Analysis of deca-nanometer bulk and SOI MOSFETs for Analog/Mixed-signal and RF applications using the Time-Dependent Monte Carlo Approach
2007 S. Eminente; N. Barin; P. Palestri; C. Fiegna; E. Sangiorgi.
Thermal analysis of nanoscale MOSFETs by 2D electro-thermal simulation
2007 Y. Yang; C. Fiegna; S. Eminente; A.G. O'Neill; E. Sangiorgi
Understandig Quasi-Ballistics Trasport in Nano-MOSFETS: Part I Scattering in the Channel and in the Drain
2005 Palestri P.; Esseni D.; Eminente S.; Fiegna C.; Sangiorgi E.; Selmi L.
Understandig quasi-ballistics trasport in nano-MOSFETS: Part II Technology scaling along the ITRS
2005 Eminente S.; Esseni D.; Palestri P.; Fiegna C.; Selmi L.; Sangiorgi E.
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| A Monte-Carlo study of the role of scattering in deca-nanometer MOSFETs | P. Palestri; D. Esseni; S. Eminente; C. Fiegna; E. Sangiorgi; L. Selmi | 2004-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |
| An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation | P. Palestri; S. Eminente; D. Esseni;C. Fiegna; E. Sangiorgi; L. Selmi | 2005-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |
| An improved semiclassical Monte-Carlo appproach for nano-scale MOSFET simulation | P. PALESTRI; S. EMINENTE; D. ESSENI; FIEGNA C.; E. SANGIORGI; L. SELMI | 2004-01-01 | - | K. De Meyer, N. Collaert | 4.01 Contributo in Atti di convegno | - |
| Analysis of Ballistic Transport in MOSFETs along the ITRS Roadmap | P.Palestri; S.Eminente; D.Esseni; C.Fiegna; L.Selmi; E.Sangiorgi | 2005-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| Ballistic effects in advanced MOSFETs along the Roadmap | E. Sangiorgi; P. Palestri; S. Eminente; D. Esseni; C. Fiegna; L. Selmi | 2005-01-01 | - | Electrochemical Society Inc. | 4.01 Contributo in Atti di convegno | - |
| Comparative analysis of the RF and noise performance of bulk and single-gate ultra-thin SOI MOSFETs by numerical simulation | EMINENTE S.; ALESSANDRINI M.; FIEGNA C. | 2004-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |
| Comparison of BULK and Ultra-Thin Double Gate SOI MOSFETs for the 65 nm Technology Node: a Monte-Carlo Study | M. Braccioli; S.Eminente; P.Palestri; D.Esseni; C.Fiegna | 2005-01-01 | - | Università di Pisa | 4.01 Contributo in Atti di convegno | - |
| Enhanced ballisticity in nano-MOSFETs along the ITRS roadmap: A Monte Carlo study | S. Eminente; D. Esseni; P. Palestri; C. Fiegna; L. Selmi; E. Sangiorgi | 2004-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |
| Monte Carlo Simulation of deca-nanometer MOSFETs for Analog/Mixed-Signal and RF applications | S. Eminente; N. Barin; P. Palestri; C. Fiegna; E. Sangiorgi | 2006-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |
| Small-signal Analysis of deca-nanometer bulk and SOI MOSFETs for Analog/Mixed-signal and RF applications using the Time-Dependent Monte Carlo Approach | S. Eminente; N. Barin; P. Palestri; C. Fiegna; E. Sangiorgi. | 2007-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Thermal analysis of nanoscale MOSFETs by 2D electro-thermal simulation | Y. Yang; C. Fiegna; S. Eminente; A.G. O'Neill; E. Sangiorgi | 2007-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| Understandig Quasi-Ballistics Trasport in Nano-MOSFETS: Part I Scattering in the Channel and in the Drain | Palestri P.; Esseni D.; Eminente S.; Fiegna C.; Sangiorgi E.; Selmi L. | 2005-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Understandig quasi-ballistics trasport in nano-MOSFETS: Part II Technology scaling along the ITRS | Eminente S.; Esseni D.; Palestri P.; Fiegna C.; Selmi L.; Sangiorgi E. | 2005-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |