BACCARANI, GIORGIO
BACCARANI, GIORGIO
CENTRO RICERCA SISTEMI ELETTRONICI INGEGN.INF. E TELECOM."ERCOLE DE CASTRO"
15th International Conference on Simulation of Semiconductor Processes and Devices
2010 G. Baccarani; M. Rudan
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics
2005 M. RUDAN; E. GNANI; S. REGGIANI; G. BACCARANI
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport
2005 M. RUDAN; E. GNANI; S. REGGIANI; BACCARANI G.
A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects
1999 Baccarani G.; Reggiani S.
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs
2009 P. Palestri; C. Alexander; A. Asenov; V. Aubry-Fortuna; G. Baccarani; A. Bournel; M. Braccioli; B. Cheng; P. Dollfus; A. Esposito; D. Esseni; C. Fenouillet-Beranger; C. Fiegna; G. Fiori; A. Ghetti; G. Iannaccone; A. Martinez; B. Majkusiak; S. Monfray; V. Peikert; S. Reggiani; C. Riddet; J. Saint-Martin; E. Sangiorgi; A. Schenk; L. Selmi; L. Silvestri; P. Toniutti; J. Walczak
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires
2007 M. Lenzi; E. Gnani; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations
2010 L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani.
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part I: Fundamental Principles
2010 L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films
2010 L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani
A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs
2004 E. Gnani; S. Reggiani; M. Rudan; G. Baccarani
A new approach to the self-consistent solution of the Schrödinger- Poisson equations in nanowire MOSFETs
2004 Gnani E.; Reggiani S.; Rudan M.; Baccarani G.
A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique
2005 S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. Denison; N. Jensen; G. Groos; M. Stecher
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects
2007 E. Gnani; A. Gnudi; S. Reggiani; M. Rudan; G. Baccarani
A quantum mechanical analysis of the electrostatics in multiple-gate FETs
2005 E. Gnani; S. Reggiani; M. Rudan; G. Baccarani
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs
2015 Villani, F.; Gnani, E; Gnudi, A.; Reggiani, S.; Baccarani, G.
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs
2014 Villani, F.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G.
A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor
2011 E. Gnani; S. Reggiani; A. Gnudi; G. Baccarani
A single-scan algorithm for connected components labelling in a traffic monitoring application
2003 Bevilacqua A.; Lanza A.; Baccarani G.; Rovatti R.
A TCAD Low-Field Electron Mobility Model for Thin-Body InGaAs on InP MOSFETs Calibrated on Experimental Characteristics
2015 Betti Beneventi, Giovanni; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Alian, Alireza; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Baccarani, Giorgio
A unified analytical model for bulk and surface mobility in Si n- and p-Channel MOSFET's
1999 Reggiani S.; Valdinoci M.; Colalongo L.; Baccarani G.
Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
---|---|---|---|---|---|---|
15th International Conference on Simulation of Semiconductor Processes and Devices | G. Baccarani; M. Rudan | 2010-01-01 | - | IEEE | 3.01 Monografia / trattato scientifico in forma di libro | - |
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics | M. RUDAN; E. GNANI; S. REGGIANI; G. BACCARANI | 2005-01-01 | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - | 1.01 Articolo in rivista | - |
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport | M. RUDAN; E. GNANI; S. REGGIANI; BACCARANI G. | 2005-01-01 | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - | 1.01 Articolo in rivista | - |
A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects | Baccarani G.; Reggiani S. | 1999-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs | P. Palestri; C. Alexander; A. Asenov; V. Aubry-Fortuna; G. Baccarani; A. Bournel; M. Braccioli; B.... Cheng; P. Dollfus; A. Esposito; D. Esseni; C. Fenouillet-Beranger; C. Fiegna; G. Fiori; A. Ghetti; G. Iannaccone; A. Martinez; B. Majkusiak; S. Monfray; V. Peikert; S. Reggiani; C. Riddet; J. Saint-Martin; E. Sangiorgi; A. Schenk; L. Selmi; L. Silvestri; P. Toniutti; J. Walczak | 2009-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires | M. Lenzi; E. Gnani; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani | 2007-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations | L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani. | 2010-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part I: Fundamental Principles | L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani | 2010-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films | L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani | 2010-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs | E. Gnani; S. Reggiani; M. Rudan; G. Baccarani | 2004-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
A new approach to the self-consistent solution of the Schrödinger- Poisson equations in nanowire MOSFETs | Gnani E.; Reggiani S.; Rudan M.; Baccarani G. | 2004-01-01 | - | - | 4.01 Contributo in Atti di convegno | - |
A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique | S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. ...Denison; N. Jensen; G. Groos; M. Stecher | 2005-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | - |
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects | E. Gnani; A. Gnudi; S. Reggiani; M. Rudan; G. Baccarani | 2007-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
A quantum mechanical analysis of the electrostatics in multiple-gate FETs | E. Gnani; S. Reggiani; M. Rudan; G. Baccarani | 2005-01-01 | - | IEEE EDS Japan Chapter | 4.01 Contributo in Atti di convegno | - |
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs | Villani, F.; Gnani, E; Gnudi, A.; Reggiani, S.; Baccarani, G. | 2015-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs | Villani, F.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G. | 2014-01-01 | - | Bez, R; Pavan, P; Meneghesso, G; | 4.01 Contributo in Atti di convegno | - |
A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor | E. Gnani; S. Reggiani; A. Gnudi; G. Baccarani | 2011-01-01 | - | s.n | 4.02 Riassunto (Abstract) | - |
A single-scan algorithm for connected components labelling in a traffic monitoring application | Bevilacqua A.; Lanza A.; Baccarani G.; Rovatti R. | 2003-01-01 | - | Springer Berlin Heidelberg | 4.01 Contributo in Atti di convegno | - |
A TCAD Low-Field Electron Mobility Model for Thin-Body InGaAs on InP MOSFETs Calibrated on Experimental Characteristics | Betti Beneventi, Giovanni; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Alian, Alireza; Colla...ert, Nadine; Mocuta, Anda; Thean, Aaron; Baccarani, Giorgio | 2015-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
A unified analytical model for bulk and surface mobility in Si n- and p-Channel MOSFET's | Reggiani S.; Valdinoci M.; Colalongo L.; Baccarani G. | 1999-01-01 | - | IEEE Computer Society | 4.01 Contributo in Atti di convegno | - |