Sfoglia per Autore
Band-structure calculations of SiC>2 by means of hartree-fock and density-functional techniques
2000 Gnani E.; Reggiani S.; Colle R.; Rudan M.
Calculation of transport parameters of SiO2 polymorphs
2001 Gnani E.; Reggiani S.; Colle R.; Rudan M.
Full-band transport properties of silicon dioxide using the spherical-harmonics expansion of the BTE
2002 Gnani E.; Reggiani S.; Rudan M.
Extraction method for the impact-ionization multiplication factor in silicon at large operating temperatures
2002 Gnani E.; Reggiani S.; Rudan M.; Baccarani G.
Density of states and group velocity of electrons in (formula presented) calculated from a full band structure
2002 Gnani E.; Reggiani S.; Rudan M.
Density of states and group velocity of electrons in SiO2 calculated from a full band structure
2002 Gnani E.; Reggiani S.; Rudan M.
Determination of the Hall voltage in devices with arbitrary aspect ratio and probe position
2003 Rudan M.; Reggiani S.; Gnani E.; Baccarani G.
Hole density of states and group velocity in SiO2
2003 Gnani E.; Reggiani S.; Rudan M.
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs
2004 E. Gnani; S. Reggiani; M. Rudan; G. Baccarani
The density-gradient correction as a disguised pilot wave of de Broglie
2004 M. RUDAN; E. GNANI; S. REGGIANI; G. BACCARANI
Investigation about the high temperature impact-ionization coefficient in silicon
2004 S. REGGIANI; M. RUDAN; E. GNANI; G. BACCARANI
A new approach to the self-consistent solution of the Schrödinger- Poisson equations in nanowire MOSFETs
2004 Gnani E.; Reggiani S.; Rudan M.; Baccarani G.
A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs
2004 E. Gnani; S. Reggiani; M. Rudan; G. Baccarani
Experimental extraction of the electron impact-ionization coefficient at large operating temperatures
2004 S. REGGIANI; M. RUDAN; E. GNANI; BACCARANI G.; C. CORVASCE; D. BARLINI; M. CIAPPA; W. FICHTNER; M. DENISON; N. JENSEN; G. GROOS; M. STECHER
Automatic Optimization Algorithm for a Direct 2D and 3D Mesh Generation from the Layout Information
2004 E. Gnani; F. Ghidoni; M. Rudan
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs
2005 E. Gnani; S. Reggiani; M. Rudan; G. Baccarani
Memory Devices: Part II – Nonvolatile Memories
2005 Baccarani G; Gnani E
A quantum mechanical analysis of the electrostatics in multiple-gate FETs
2005 E. Gnani; S. Reggiani; M. Rudan; G. Baccarani
The R-Sigma Approach to Tunneling in Nanoscale Devices
2005 M. Rudan; A. Marchi; R. Brunetti; S. Reggiani; E. Gnani
Memory Devices: Part II – Non-Volatile Memories
2005 G. BACCARANI; E. GNANI
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| Band-structure calculations of SiC>2 by means of hartree-fock and density-functional techniques | Gnani E.; Reggiani S.; Colle R.; Rudan M. | 2000-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Calculation of transport parameters of SiO2 polymorphs | Gnani E.; Reggiani S.; Colle R.; Rudan M. | 2001-01-01 | VLSI DESIGN | - | 1.01 Articolo in rivista | - |
| Full-band transport properties of silicon dioxide using the spherical-harmonics expansion of the BTE | Gnani E.; Reggiani S.; Rudan M. | 2002-01-01 | PHYSICA. B, CONDENSED MATTER | - | 1.01 Articolo in rivista | - |
| Extraction method for the impact-ionization multiplication factor in silicon at large operating temperatures | Gnani E.; Reggiani S.; Rudan M.; Baccarani G. | 2002-01-01 | - | IEEE Computer Society | 4.01 Contributo in Atti di convegno | - |
| Density of states and group velocity of electrons in (formula presented) calculated from a full band structure | Gnani E.; Reggiani S.; Rudan M. | 2002-01-01 | PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS | - | 1.01 Articolo in rivista | - |
| Density of states and group velocity of electrons in SiO2 calculated from a full band structure | Gnani E.; Reggiani S.; Rudan M. | 2002-01-01 | PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS | - | 1.01 Articolo in rivista | - |
| Determination of the Hall voltage in devices with arbitrary aspect ratio and probe position | Rudan M.; Reggiani S.; Gnani E.; Baccarani G. | 2003-01-01 | - | IEEE Computer Society | 4.01 Contributo in Atti di convegno | - |
| Hole density of states and group velocity in SiO2 | Gnani E.; Reggiani S.; Rudan M. | 2003-01-01 | PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS | - | 1.01 Articolo in rivista | - |
| On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs | E. Gnani; S. Reggiani; M. Rudan; G. Baccarani | 2004-01-01 | - | M. Lundstrum | 4.01 Contributo in Atti di convegno | - |
| The density-gradient correction as a disguised pilot wave of de Broglie | M. RUDAN; E. GNANI; S. REGGIANI; G. BACCARANI | 2004-01-01 | - | Springer | 4.01 Contributo in Atti di convegno | - |
| Investigation about the high temperature impact-ionization coefficient in silicon | S. REGGIANI; M. RUDAN; E. GNANI; G. BACCARANI | 2004-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| A new approach to the self-consistent solution of the Schrödinger- Poisson equations in nanowire MOSFETs | Gnani E.; Reggiani S.; Rudan M.; Baccarani G. | 2004-01-01 | - | - | 4.01 Contributo in Atti di convegno | - |
| A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs | E. Gnani; S. Reggiani; M. Rudan; G. Baccarani | 2004-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| Experimental extraction of the electron impact-ionization coefficient at large operating temperatures | S. REGGIANI; M. RUDAN; E. GNANI; BACCARANI G.; C. CORVASCE; D. BARLINI; M. CIAPPA; W. FICHTNER; M.... DENISON; N. JENSEN; G. GROOS; M. STECHER | 2004-01-01 | - | IEEE-EDS | 4.01 Contributo in Atti di convegno | - |
| Automatic Optimization Algorithm for a Direct 2D and 3D Mesh Generation from the Layout Information | E. Gnani; F. Ghidoni; M. Rudan | 2004-01-01 | - | Springer | 4.01 Contributo in Atti di convegno | - |
| On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs | E. Gnani; S. Reggiani; M. Rudan; G. Baccarani | 2005-01-01 | JOURNAL OF COMPUTATIONAL ELECTRONICS | - | 1.01 Articolo in rivista | - |
| Memory Devices: Part II – Nonvolatile Memories | Baccarani G; Gnani E | 2005-01-01 | - | Elsevier | 2.05 Voce in dizionario o enciclopedia | - |
| A quantum mechanical analysis of the electrostatics in multiple-gate FETs | E. Gnani; S. Reggiani; M. Rudan; G. Baccarani | 2005-01-01 | - | IEEE EDS Japan Chapter | 4.01 Contributo in Atti di convegno | - |
| The R-Sigma Approach to Tunneling in Nanoscale Devices | M. Rudan; A. Marchi; R. Brunetti; S. Reggiani; E. Gnani | 2005-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |
| Memory Devices: Part II – Non-Volatile Memories | G. BACCARANI; E. GNANI | 2005-01-01 | - | Elsevier | 2.01 Capitolo / saggio in libro | - |
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