Sfoglia per Autore
NBTI in p-channel power U-MOSFETs: Understanding the degradation and the recovery mechanisms2014 15th International Conference on Ultimate Integration on Silicon (ULIS)
2014 Andrea Natale Tallarico;Paolo Magnone;Giacomo Barletta;Angelo Magri;Enrico Sangiorgi;Claudio Fiegna
Impact of the substrate orientation on CHC reliability in n-FinFETs - Separation of the various contributions
2014 Tallarico A.N.; Cho M.; Franco J.; Ritzenthaler R.; Togo M.; Horiguchi N.; Groeseneken G.; Crupi F.
Modeling self-heating effects in AlGaN/GaN electronic devices during static and dynamic operation mode
2014 Andrea Natale Tallarico; Paolo Magnone; Enrico Sangiorgi; Claudio Fiegna
Negative Bias Temperature Stress Reliability in Trench-Gated P-Channel Power MOSFETs
2014 Andrea Natale Tallarico;Paolo Magnone;Giacomo Barletta;Angelo Magri;Enrico Sangiorgi;Claudio Fiegna
Modeling Spatial and Energy Oxide Trap Distribution Responsible for NBTI in p-Channel Power U-MOSFETs
2015 Andrea Natale Tallarico; Paolo Magnone; Giacomo Barletta; Angelo Magrì; Enrico Sangiorgi; Claudio Fiegna
Influence of bias and temperature conditions on NBTI physical mechanisms in p-channel power U-MOSFETs
2015 Andrea Natale Tallarico; Paolo Magnone; Giacomo Barletta; Angelo Magrì; Enrico Sangiorgi; Claudio Fiegna
ON-State Degradation in AlGaN/GaN-on-Silicon Schottky Barrier Diodes: Investigation of the Geometry Dependence
2016 Tallarico, Andrea Natale; Magnone, Paolo; Stoffels, Steve; Lenci, Silvia; Hu, Jie; Marcon, Denis; Sangiorgi, Enrico; Decoutere, Stefaan; Fiegna, Claudio
Reliability of Au-free AlGaN/GaN-on-silicon Schottky barrier diodes under ON-state stress
2016 Tallarico, ANDREA NATALE; Stoffels, Steve; Magnone, Paolo; Jie, Hu; Lenci, Silvia; Marcon, Denis; Sangiorgi, Enrico; Fiegna, Claudio; Decoutere, Stefaan
Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode spacing length dependence
2016 Tallarico, Andrea Natale; Magnone, Paolo; Stoffels, Steve; Lenci, Silvia; Hu, Jie; Marcon, Denis; Sangiorgi, Enrico; Decoutere, Stefaan; Fiegna, Claudio
Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes with Gated Edge Termination
2016 Hu, Jie; Stoffels, Steve; Lenci, Silvia; De Jaeger, Brice; Ronchi, Nicolo; Tallarico, Andrea Natale; Wellekens, Dirk; You, Shuzhen; Bakeroot, Benoit; Groeseneken, Guido; Decoutere, Stefaan
Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs
2017 Tallarico, Andrea Natale; Stoffels, Steve; Magnone, Paolo; Posthuma, Niels; Sangiorgi, Enrico; Decoutere, Stefaan; Fiegna, Claudio
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level
2017 Rossetto, I.; Meneghini, M.; Canato, E.; Barbato, M.; Stoffels, S.; Posthuma, N.; Decoutere, S.; Tallarico, A. N.; Meneghesso, G.; Zanoni, E.
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide
2017 Tallarico, A. N.; Reggiani, S.; Magnone, P.; Croce, G.; Depetro, R.; Gattari, P.; Sangiorgi, E.; Fiegna, C.
Failure mode for p-GaN gates under forward gate stress with varying Mg concentration
2017 Stoffels, S.; Bakeroot, B.; Wu, T. L.; Marcon, D.; Posthuma, N. E.; Decoutere, S.; Tallarico, A. N.; Fiegna, C.
PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on ΔVTH and Underlying Degradation Mechanisms
2017 Tallarico, Andrea Natale; Stoffels, Steve; Posthuma, Niels; Magnone, Paolo; Marcon, Denis; Decoutere, Stefaan; Sangiorgi, Enrico; Fiegna, Claudio
Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
2017 Hu, Jie; Stoffels, Steve; Zhao, Ming; Tallarico, Andrea Natale; Rossetto, Isabella; Meneghini, Matteo; Kang, Xuanwu; Bakeroot, Benoit; Marcon, Denis; Kaczer, Ben; Decoutere, Stefaan; Groeseneken, Guido
TCAD investigation on hot-electron injection in new-generation technologies
2018 Reggiani, S.; Rossetti, M.; Gnudi, A.*; Tallarico, A.N.; Molfese, A.; Manzini, S.; Depetro, R.; Croce, G.; Sangiorgi, E.; Fiegna, C.
Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture
2018 Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Torti, Andrea Mario; Croce, Giuseppe; Sangiorgi, Enrico; Fiegna, Claudio
Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation
2018 Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Manzini, Stefano; Torti, Andrea Mario; Croce, Giuseppe; Sangiorgi, Enrico; Fiegna, Claudio
Characterization and Modeling of BTI in SiC MOSFETs
2019 Cornigli D.; Tallarico A.N.; Reggiani S.; Fiegna C.; Sangiorgi E.; Sanchez L.; Valdivieso C.; Consentino G.; Crupi F.
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| NBTI in p-channel power U-MOSFETs: Understanding the degradation and the recovery mechanisms2014 15th International Conference on Ultimate Integration on Silicon (ULIS) | Andrea Natale Tallarico;Paolo Magnone;Giacomo Barletta;Angelo Magri;Enrico Sangiorgi;Claudio Fiegna | 2014-01-01 | - | IEEE Computer Society | 4.01 Contributo in Atti di convegno | - |
| Impact of the substrate orientation on CHC reliability in n-FinFETs - Separation of the various contributions | Tallarico A.N.; Cho M.; Franco J.; Ritzenthaler R.; Togo M.; Horiguchi N.; Groeseneken G.; Crupi F. | 2014-01-01 | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | - | 1.01 Articolo in rivista | - |
| Modeling self-heating effects in AlGaN/GaN electronic devices during static and dynamic operation mode | Andrea Natale Tallarico; Paolo Magnone; Enrico Sangiorgi; Claudio Fiegna | 2014-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |
| Negative Bias Temperature Stress Reliability in Trench-Gated P-Channel Power MOSFETs | Andrea Natale Tallarico;Paolo Magnone;Giacomo Barletta;Angelo Magri;Enrico Sangiorgi;Claudio Fiegna | 2014-01-01 | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | - | 1.01 Articolo in rivista | - |
| Modeling Spatial and Energy Oxide Trap Distribution Responsible for NBTI in p-Channel Power U-MOSFETs | Andrea Natale Tallarico; Paolo Magnone; Giacomo Barletta; Angelo Magrì; Enrico Sangiorgi; Claudio... Fiegna | 2015-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |
| Influence of bias and temperature conditions on NBTI physical mechanisms in p-channel power U-MOSFETs | Andrea Natale Tallarico; Paolo Magnone; Giacomo Barletta; Angelo Magrì; Enrico Sangiorgi; Claudio... Fiegna | 2015-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |
| ON-State Degradation in AlGaN/GaN-on-Silicon Schottky Barrier Diodes: Investigation of the Geometry Dependence | Tallarico, Andrea Natale; Magnone, Paolo; Stoffels, Steve; Lenci, Silvia; Hu, Jie; Marcon, Denis;... Sangiorgi, Enrico; Decoutere, Stefaan; Fiegna, Claudio | 2016-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Reliability of Au-free AlGaN/GaN-on-silicon Schottky barrier diodes under ON-state stress | Tallarico, ANDREA NATALE; Stoffels, Steve; Magnone, Paolo; Jie, Hu; Lenci, Silvia; Marcon, Denis;... Sangiorgi, Enrico; Fiegna, Claudio; Decoutere, Stefaan | 2016-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode spacing length dependence | Tallarico, Andrea Natale; Magnone, Paolo; Stoffels, Steve; Lenci, Silvia; Hu, Jie; Marcon, Denis;... Sangiorgi, Enrico; Decoutere, Stefaan; Fiegna, Claudio | 2016-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes with Gated Edge Termination | Hu, Jie; Stoffels, Steve; Lenci, Silvia; De Jaeger, Brice; Ronchi, Nicolo; Tallarico, Andrea Nata...le; Wellekens, Dirk; You, Shuzhen; Bakeroot, Benoit; Groeseneken, Guido; Decoutere, Stefaan | 2016-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs | Tallarico, Andrea Natale; Stoffels, Steve; Magnone, Paolo; Posthuma, Niels; Sangiorgi, Enrico; De...coutere, Stefaan; Fiegna, Claudio | 2017-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | - |
| Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level | Rossetto, I.; Meneghini, M.; Canato, E.; Barbato, M.; Stoffels, S.; Posthuma, N.; Decoutere, S.; ...Tallarico, A. N.; Meneghesso, G.; Zanoni, E. | 2017-01-01 | MICROELECTRONICS RELIABILITY | - | 1.01 Articolo in rivista | - |
| Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide | Tallarico, A. N.; Reggiani, S.; Magnone, P.; Croce, G.; Depetro, R.; Gattari, P.; Sangiorgi, E.; ...Fiegna, C. | 2017-01-01 | MICROELECTRONICS RELIABILITY | - | 1.01 Articolo in rivista | FINAL_MANUSCRIPT_MR.pdf |
| Failure mode for p-GaN gates under forward gate stress with varying Mg concentration | Stoffels, S.; Bakeroot, B.; Wu, T. L.; Marcon, D.; Posthuma, N. E.; Decoutere, S.; Tallarico, A. ...N.; Fiegna, C. | 2017-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on ΔVTH and Underlying Degradation Mechanisms | Tallarico, Andrea Natale; Stoffels, Steve; Posthuma, Niels; Magnone, Paolo; Marcon, Denis; Decout...ere, Stefaan; Sangiorgi, Enrico; Fiegna, Claudio | 2017-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests | Hu, Jie; Stoffels, Steve; Zhao, Ming; Tallarico, Andrea Natale; Rossetto, Isabella; Meneghini, Ma...tteo; Kang, Xuanwu; Bakeroot, Benoit; Marcon, Denis; Kaczer, Ben; Decoutere, Stefaan; Groeseneken, Guido | 2017-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | - |
| TCAD investigation on hot-electron injection in new-generation technologies | Reggiani, S.; Rossetti, M.; Gnudi, A.*; Tallarico, A.N.; Molfese, A.; Manzini, S.; Depetro, R.; C...roce, G.; Sangiorgi, E.; Fiegna, C. | 2018-01-01 | MICROELECTRONICS RELIABILITY | - | 1.01 Articolo in rivista | Paper_EXT_REV_v0_final.pdf; Paper_EXT_preprint.pdf |
| Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture | Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Torti, Andrea Mario; Croce, Gius...eppe; Sangiorgi, Enrico; Fiegna, Claudio | 2018-01-01 | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | - | 1.01 Articolo in rivista | 08255610Tallarico2018.pdf |
| Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation | Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Manzini, Stefano; Torti, Andrea ...Mario; Croce, Giuseppe; Sangiorgi, Enrico; Fiegna, Claudio | 2018-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | Hot-Carrier Degradation in Power LDMOS_ Drain Bias Dependence and Lifetime Evaluation.pdf; Post-print_Version.pdf |
| Characterization and Modeling of BTI in SiC MOSFETs | Cornigli D.; Tallarico A.N.; Reggiani S.; Fiegna C.; Sangiorgi E.; Sanchez L.; Valdivieso C.; Con...sentino G.; Crupi F. | 2019-01-01 | - | Editions Frontieres | 4.01 Contributo in Atti di convegno | 08901761 (1).pdf; combinepdfESSDERC2019.pdf |
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