Sfoglia per Autore
Full-Quantum Calculations of Low-Field Channel Mobility in Graphene Nanoribbon FETs Including Acoustic Phonon Scattering and Edge Roughness Effects
2010 I. Imperiale; R. Grassi; A. Gnudi; S. Reggiani; E. Gnani; G. Baccarani.
Computational study of graphene nanoribbon FETs for RF applications
2010 I. Imperiale; S. Bonsignore; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani
High-frequency analog GNR-FET design criteria
2011 I. Imperiale; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani
Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering
2013 R. Grassi;A. Gnudi;I. Imperiale;E. Gnani;S. Reggiani;G. Baccarani
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime
2014 Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Denison, M.
TCAD modeling of charge transport in HV-IC encapsulation materials
2014 Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Denison, M.
Optimization of HV LDMOS devices accounting for packaging interaction
2015 Arienti, G; Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Hernandez-Luna, A.; Huckabee, J.; Denison, M.
Numerical study of GaN-on-Si HEMT breakdown instability accounting for substrate and packaging interactions
2015 Monti, F; Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Hernandez-Luna, A.; Huckabee, J.; Tipirneni, N.; Denison, M.
Role of encapsulation formulation on charge transport phenomena and HV device instability
2015 Imperiale, Ilaria; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Nguyen, Luu; Hernandez-Luna, Alex; Huckabee, James; Denison, Marie; Varghese, Dhanoop
Role of the insulating fillers in the encapsulation material on the lateral charge spreading in HV-ICs
2017 Imperiale, Ilaria; Reggiani, Susanna; Pavarese, Giuseppe; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Ahn, Woojin; Alam, Muhammad A.; Varghese, Dhanoop; Hernandez-Luna, Alejandro; Nguyen, Luu; Krishnan, Srikanth
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| Full-Quantum Calculations of Low-Field Channel Mobility in Graphene Nanoribbon FETs Including Acoustic Phonon Scattering and Edge Roughness Effects | I. Imperiale; R. Grassi; A. Gnudi; S. Reggiani; E. Gnani; G. Baccarani. | 2010-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| Computational study of graphene nanoribbon FETs for RF applications | I. Imperiale; S. Bonsignore; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani | 2010-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| High-frequency analog GNR-FET design criteria | I. Imperiale; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani | 2011-01-01 | - | IEEE Publishing Services | 4.01 Contributo in Atti di convegno | - |
| Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering | R. Grassi;A. Gnudi;I. Imperiale;E. Gnani;S. Reggiani;G. Baccarani | 2013-01-01 | JOURNAL OF APPLIED PHYSICS | - | 1.01 Articolo in rivista | - |
| TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime | Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Denison, M. | 2014-01-01 | - | - | 4.01 Contributo in Atti di convegno | - |
| TCAD modeling of charge transport in HV-IC encapsulation materials | Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Denison, M. | 2014-01-01 | - | - | 4.01 Contributo in Atti di convegno | - |
| Optimization of HV LDMOS devices accounting for packaging interaction | Arienti, G; Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Hernand...ez-Luna, A.; Huckabee, J.; Denison, M. | 2015-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| Numerical study of GaN-on-Si HEMT breakdown instability accounting for substrate and packaging interactions | Monti, F; Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Hernandez...-Luna, A.; Huckabee, J.; Tipirneni, N.; Denison, M. | 2015-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| Role of encapsulation formulation on charge transport phenomena and HV device instability | Imperiale, Ilaria; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio; Nguyen, L...uu; Hernandez-Luna, Alex; Huckabee, James; Denison, Marie; Varghese, Dhanoop | 2015-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| Role of the insulating fillers in the encapsulation material on the lateral charge spreading in HV-ICs | Imperiale, Ilaria; Reggiani, Susanna; Pavarese, Giuseppe; Gnani, Elena; Gnudi, Antonio; Baccarani..., Giorgio; Ahn, Woojin; Alam, Muhammad A.; Varghese, Dhanoop; Hernandez-Luna, Alejandro; Nguyen, Luu; Krishnan, Srikanth | 2017-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
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