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Mostrati risultati da 1 a 20 di 145
Titolo Autore(i) Anno Periodico Editore Tipo File
Comprehensive system for submicron-device simulation Rudan Massimo; Lorenzini Martino; Vecchi Maria Cristina; Reggiani Susanna 1997-01-01 - IEEE 4.01 Contributo in Atti di convegno -
Temperature dependence of the electron and hole scattering mechanisms in silicon analyzed through a full-band, spherical-harmonics solution of the BTE Reggiani S.; Vecchi M.C.; Rudan M. 1998-01-01 VLSI DESIGN - 1.01 Articolo in rivista -
Investigation on electron and hole transport properties using the full-band spherical-harmonics expansion method Reggiani S.; Vecchi M.C.; Rudan M. 1998-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
Homogeneous transport in silicon dioxide using the spherical-harmonics expansion of the BTE Scozzoli L.; Reggiani S.; Rudan M. 1999-01-01 - IEEE 4.01 Contributo in Atti di convegno -
Electron injection in MOSFETs with a self-consistent Si and SiO2 BTE solution based on spherical-harmonics expansion Marsella M.; Reggiani S.; Gnudi A.; Rudan M. 2000-01-01 - IEEE Computer Society 4.01 Contributo in Atti di convegno -
Two-qbit gates based on coupled quantum wires Reggiani S.; Bertoni A.; Bordone P.; Brunetti R.; Jacoboni C.; Rudan M.; Baccarani G. 2000-01-01 - IEEE 4.01 Contributo in Atti di convegno -
Analytical, temperature-dependent model for majority- and minority-carrier mobility in silicon devices Reggiani S.; Valdinoci M.; Colalongo L.; Rudan M.; Baccarani G. 2000-01-01 VLSI DESIGN - 1.01 Articolo in rivista -
Band-structure calculations of SiC>2 by means of hartree-fock and density-functional techniques Gnani E.; Reggiani S.; Colle R.; Rudan M. 2000-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
Calculation of transport parameters of SiO2 polymorphs Gnani E.; Reggiani S.; Colle R.; Rudan M. 2001-01-01 VLSI DESIGN - 1.01 Articolo in rivista -
Quantum algorithms in the frame of the coupled quantum-wires system Reggiani S.; Bertoni A.; Rudan M. 2002-01-01 PHYSICA. B, CONDENSED MATTER - 1.01 Articolo in rivista -
Density of states and group velocity of electrons in SiO2 calculated from a full band structure Gnani E.; Reggiani S.; Rudan M. 2002-01-01 PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS - 1.01 Articolo in rivista -
Full-band transport properties of silicon dioxide using the spherical-harmonics expansion of the BTE Gnani E.; Reggiani S.; Rudan M. 2002-01-01 PHYSICA. B, CONDENSED MATTER - 1.01 Articolo in rivista -
Extraction method for the impact-ionization multiplication factor in silicon at large operating temperatures Gnani E.; Reggiani S.; Rudan M.; Baccarani G. 2002-01-01 - IEEE Computer Society 4.01 Contributo in Atti di convegno -
Numerical simulation of a two-particle wave function in quantum wires Reggiani S.; Bertoni A.; Rudan M. 2002-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Density of states and group velocity of electrons in (formula presented) calculated from a full band structure Gnani E.; Reggiani S.; Rudan M. 2002-01-01 PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS - 1.01 Articolo in rivista -
Electron and hole mobility in silicon at large operating temperatures - Part I: Bulk mobility Reggiani S.; Valdinoci M.; Colalongo L.; Rudan M.; Baccarani G.; Stricker A.D.; Illien F.; Felber... N.; Fichtner W.; Zullino L. 2002-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
Surface mobility in silicon at large operating temperature Reggiani S.; Valdinoci A.; Colalongo L.; Rudan M.; Baccarani G.; Stricker A.; Illien F.; Felber N....; Fichtner W.; Mettler S.; Lindenkreuz S.; Zullino L. 2002-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Two-Particle Eigenfunctions of Electrons Propagating in Two Parallel Quantum Wires Marchi A.; Reggiani S.; Bertoni A.; Rudan M. 2003-01-01 JOURNAL OF COMPUTATIONAL ELECTRONICS - 1.01 Articolo in rivista -
Hole density of states and group velocity in SiO2 Gnani E.; Reggiani S.; Rudan M. 2003-01-01 PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS - 1.01 Articolo in rivista -
Determination of the Hall voltage in devices with arbitrary aspect ratio and probe position Rudan M.; Reggiani S.; Gnani E.; Baccarani G. 2003-01-01 - IEEE Computer Society 4.01 Contributo in Atti di convegno -
Mostrati risultati da 1 a 20 di 145
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