Sfoglia per Autore
Analysis of double-gate MOS structures by solving Poisson and Schroedinger equations with open boundaries
2004 N. BARIN; FIEGNA C.
Enhanced ballisticity in nano-MOSFETs along the ITRS roadmap: A Monte Carlo study
2004 S. Eminente; D. Esseni; P. Palestri; C. Fiegna; L. Selmi; E. Sangiorgi
A Monte-Carlo study of the role of scattering in deca-nanometer MOSFETs
2004 P. Palestri; D. Esseni; S. Eminente; C. Fiegna; E. Sangiorgi; L. Selmi
Evaluation of ultra-thin double gate MOSFET for the 45 nm technology node
2004 N. Barin;C. Fiegna;D. Esseni;E. Sangiorgi
Development of an analytical mobility model for the simulation of ultra-thin single- and double-gate SOI MOSFETs
2004 ALESSANDRINI M.; ESSENI D.; FIEGNA C.
An improved semiclassical Monte-Carlo appproach for nano-scale MOSFET simulation
2004 P. PALESTRI; S. EMINENTE; D. ESSENI; FIEGNA C.; E. SANGIORGI; L. SELMI
Comparative analysis of the RF and noise performance of bulk and single-gate ultra-thin SOI MOSFETs by numerical simulation
2004 EMINENTE S.; ALESSANDRINI M.; FIEGNA C.
Analysis of strained-silicon-on-insulator double-gate MOS structures
2004 N. Barin; C. Fiegna; E. Sangiorgi
Stability of Self-Consistent Monte-Carlo Simulations: Revised Analysis of Linear and Non-Linear Poisson Schemes
2005 N. Barin; P. Palestri ; D. Esseni ; C. Fiegna
ULIS 2005
2005 C. Fiegna; E. Sangiorgi
Effect of the Grid Size on the Stability of Self-Consistent Monte-Carlo Simulations
2005 N.Barin; P.Palestri; D.Esseni; C.Fiegna
Scaling the High-Performance Double-Gate SOI MOSFET down to the 32 nm Technology Node with SiO2-based Gate Stacks
2005 N. Barin ; M. Braccioli ; C. Fiegna ; E. Sangiorgi
An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation
2005 P. Palestri; S. Eminente; D. Esseni;C. Fiegna; E. Sangiorgi; L. Selmi
Analysis of Ballistic Transport in MOSFETs along the ITRS Roadmap
2005 P.Palestri; S.Eminente; D.Esseni; C.Fiegna; L.Selmi; E.Sangiorgi
Comparison of BULK and Ultra-Thin Double Gate SOI MOSFETs for the 65 nm Technology Node: a Monte-Carlo Study
2005 M. Braccioli; S.Eminente; P.Palestri; D.Esseni; C.Fiegna
Ballistic effects in advanced MOSFETs along the Roadmap
2005 E. Sangiorgi; P. Palestri; S. Eminente; D. Esseni; C. Fiegna; L. Selmi
Understandig quasi-ballistics trasport in nano-MOSFETS: Part II Technology scaling along the ITRS
2005 Eminente S.; Esseni D.; Palestri P.; Fiegna C.; Selmi L.; Sangiorgi E.
Understandig Quasi-Ballistics Trasport in Nano-MOSFETS: Part I Scattering in the Channel and in the Drain
2005 Palestri P.; Esseni D.; Eminente S.; Fiegna C.; Sangiorgi E.; Selmi L.
Monte-Carlo Simulation of Decananometric Double-Gate SOI devices: Multi-Subband vs. 3D-Electron Gas with Quantum Corrections
2006 I.Riolino; M.Braccioli; L.Lucci; D.Esseni; C.Fiegna; P.Palestri; L.Selmi
Solid State Electronics Vol. 50 N.1; Special Issue: Papers selected from the 2005 ULIS Conference
2006 E. Sangiorgi; C. Fiegna
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| Analysis of double-gate MOS structures by solving Poisson and Schroedinger equations with open boundaries | N. BARIN; FIEGNA C. | 2004-01-01 | - | De Meyer K.; Collaert N. | 4.01 Contributo in Atti di convegno | - |
| Enhanced ballisticity in nano-MOSFETs along the ITRS roadmap: A Monte Carlo study | S. Eminente; D. Esseni; P. Palestri; C. Fiegna; L. Selmi; E. Sangiorgi | 2004-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |
| A Monte-Carlo study of the role of scattering in deca-nanometer MOSFETs | P. Palestri; D. Esseni; S. Eminente; C. Fiegna; E. Sangiorgi; L. Selmi | 2004-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |
| Evaluation of ultra-thin double gate MOSFET for the 45 nm technology node | N. Barin;C. Fiegna;D. Esseni;E. Sangiorgi | 2004-01-01 | - | Electrochemical Society | 4.01 Contributo in Atti di convegno | - |
| Development of an analytical mobility model for the simulation of ultra-thin single- and double-gate SOI MOSFETs | ALESSANDRINI M.; ESSENI D.; FIEGNA C. | 2004-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |
| An improved semiclassical Monte-Carlo appproach for nano-scale MOSFET simulation | P. PALESTRI; S. EMINENTE; D. ESSENI; FIEGNA C.; E. SANGIORGI; L. SELMI | 2004-01-01 | - | K. De Meyer, N. Collaert | 4.01 Contributo in Atti di convegno | - |
| Comparative analysis of the RF and noise performance of bulk and single-gate ultra-thin SOI MOSFETs by numerical simulation | EMINENTE S.; ALESSANDRINI M.; FIEGNA C. | 2004-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |
| Analysis of strained-silicon-on-insulator double-gate MOS structures | N. Barin; C. Fiegna; E. Sangiorgi | 2004-01-01 | - | R.P. Mertens, C. L. Claeys | 4.01 Contributo in Atti di convegno | - |
| Stability of Self-Consistent Monte-Carlo Simulations: Revised Analysis of Linear and Non-Linear Poisson Schemes | N. Barin; P. Palestri ; D. Esseni ; C. Fiegna | 2005-01-01 | - | Università di Pisa | 4.01 Contributo in Atti di convegno | - |
| ULIS 2005 | C. Fiegna; E. Sangiorgi | 2005-01-01 | - | ARCES, Università di Bologna | 3.02 Curatela | - |
| Effect of the Grid Size on the Stability of Self-Consistent Monte-Carlo Simulations | N.Barin; P.Palestri; D.Esseni; C.Fiegna | 2005-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| Scaling the High-Performance Double-Gate SOI MOSFET down to the 32 nm Technology Node with SiO2-based Gate Stacks | N. Barin ; M. Braccioli ; C. Fiegna ; E. Sangiorgi | 2005-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |
| An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation | P. Palestri; S. Eminente; D. Esseni;C. Fiegna; E. Sangiorgi; L. Selmi | 2005-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |
| Analysis of Ballistic Transport in MOSFETs along the ITRS Roadmap | P.Palestri; S.Eminente; D.Esseni; C.Fiegna; L.Selmi; E.Sangiorgi | 2005-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| Comparison of BULK and Ultra-Thin Double Gate SOI MOSFETs for the 65 nm Technology Node: a Monte-Carlo Study | M. Braccioli; S.Eminente; P.Palestri; D.Esseni; C.Fiegna | 2005-01-01 | - | Università di Pisa | 4.01 Contributo in Atti di convegno | - |
| Ballistic effects in advanced MOSFETs along the Roadmap | E. Sangiorgi; P. Palestri; S. Eminente; D. Esseni; C. Fiegna; L. Selmi | 2005-01-01 | - | Electrochemical Society Inc. | 4.01 Contributo in Atti di convegno | - |
| Understandig quasi-ballistics trasport in nano-MOSFETS: Part II Technology scaling along the ITRS | Eminente S.; Esseni D.; Palestri P.; Fiegna C.; Selmi L.; Sangiorgi E. | 2005-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Understandig Quasi-Ballistics Trasport in Nano-MOSFETS: Part I Scattering in the Channel and in the Drain | Palestri P.; Esseni D.; Eminente S.; Fiegna C.; Sangiorgi E.; Selmi L. | 2005-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Monte-Carlo Simulation of Decananometric Double-Gate SOI devices: Multi-Subband vs. 3D-Electron Gas with Quantum Corrections | I.Riolino; M.Braccioli; L.Lucci; D.Esseni; C.Fiegna; P.Palestri; L.Selmi | 2006-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| Solid State Electronics Vol. 50 N.1; Special Issue: Papers selected from the 2005 ULIS Conference | E. Sangiorgi; C. Fiegna | 2006-01-01 | - | Elsevier Ltd | 3.02 Curatela | - |
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