CRIS Current Research Information System

Sfoglia per Autore  BACCARANI, GIORGIO

Opzioni
Mostrati risultati da 1 a 20 di 220
Titolo Autore(i) Anno Periodico Editore Tipo File
A unified analytical model for bulk and surface mobility in Si n- and p-Channel MOSFET's Reggiani S.; Valdinoci M.; Colalongo L.; Baccarani G. 1999-01-01 - IEEE Computer Society 4.01 Contributo in Atti di convegno -
Compact double-gate MOSFET model comprising quantum-mechanical and non-static effects Baccarani G.; Reggiani S. 1999-01-01 - IEEE 4.01 Contributo in Atti di convegno -
A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects Baccarani G.; Reggiani S. 1999-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
Performance limits of CMOS technology and perspectives of quantum devices Baccarani G.; Reggiani S. 2000-01-01 COMPTES RENDUS DE L'ACADÉMIE DES SCIENCES. SÉRIE IV, PHYSIQUE, ASTROPHYSIQUE - 1.01 Articolo in rivista -
Two-qbit gates based on coupled quantum wires Reggiani S.; Bertoni A.; Bordone P.; Brunetti R.; Jacoboni C.; Rudan M.; Baccarani G. 2000-01-01 - IEEE 4.01 Contributo in Atti di convegno -
Analytical, temperature-dependent model for majority- and minority-carrier mobility in silicon devices Reggiani S.; Valdinoci M.; Colalongo L.; Rudan M.; Baccarani G. 2000-01-01 VLSI DESIGN - 1.01 Articolo in rivista -
Surface mobility in silicon at large operating temperature Reggiani S.; Valdinoci A.; Colalongo L.; Rudan M.; Baccarani G.; Stricker A.; Illien F.; Felber N....; Fichtner W.; Mettler S.; Lindenkreuz S.; Zullino L. 2002-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Extraction method for the impact-ionization multiplication factor in silicon at large operating temperatures Gnani E.; Reggiani S.; Rudan M.; Baccarani G. 2002-01-01 - IEEE Computer Society 4.01 Contributo in Atti di convegno -
Electron and hole mobility in silicon at large operating temperatures - Part I: Bulk mobility Reggiani S.; Valdinoci M.; Colalongo L.; Rudan M.; Baccarani G.; Stricker A.D.; Illien F.; Felber... N.; Fichtner W.; Zullino L. 2002-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
Determination of the Hall voltage in devices with arbitrary aspect ratio and probe position Rudan M.; Reggiani S.; Gnani E.; Baccarani G. 2003-01-01 - IEEE Computer Society 4.01 Contributo in Atti di convegno -
A single-scan algorithm for connected components labelling in a traffic monitoring application Bevilacqua A.; Lanza A.; Baccarani G.; Rovatti R. 2003-01-01 - Springer Berlin Heidelberg 4.01 Contributo in Atti di convegno -
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs E. Gnani; S. Reggiani; M. Rudan; G. Baccarani 2004-01-01 - M. Lundstrum 4.01 Contributo in Atti di convegno -
The density-gradient correction as a disguised pilot wave of de Broglie M. RUDAN; E. GNANI; S. REGGIANI; G. BACCARANI 2004-01-01 - Springer 4.01 Contributo in Atti di convegno -
Experimental extraction of the electron impact-ionization coefficient at large operating temperatures S. REGGIANI; M. RUDAN; E. GNANI; BACCARANI G.; C. CORVASCE; D. BARLINI; M. CIAPPA; W. FICHTNER; M.... DENISON; N. JENSEN; G. GROOS; M. STECHER 2004-01-01 - IEEE-EDS 4.01 Contributo in Atti di convegno -
Investigation about the high temperature impact-ionization coefficient in silicon S. REGGIANI; M. RUDAN; E. GNANI; G. BACCARANI 2004-01-01 - s.n 4.01 Contributo in Atti di convegno -
A new approach to the self-consistent solution of the Schrödinger- Poisson equations in nanowire MOSFETs Gnani E.; Reggiani S.; Rudan M.; Baccarani G. 2004-01-01 - - 4.01 Contributo in Atti di convegno -
A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs E. Gnani; S. Reggiani; M. Rudan; G. Baccarani 2004-01-01 - s.n 4.01 Contributo in Atti di convegno -
Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. ...Denison; N. Jensen; G. Groos; M. Stecher 2005-01-01 - s.n 4.01 Contributo in Atti di convegno -
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs E. Gnani; S. Reggiani; M. Rudan; G. Baccarani 2005-01-01 JOURNAL OF COMPUTATIONAL ELECTRONICS - 1.01 Articolo in rivista -
Memory Devices: Part II – Nonvolatile Memories Baccarani G; Gnani E 2005-01-01 - Elsevier 2.05 Voce in dizionario o enciclopedia -
Mostrati risultati da 1 a 20 di 220
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